ZnO thin films and light-emitting diodes

Dae Kue Hwang; Min Suk Oh; Jae Hong Lim; Seong Ju Park

doi:10.1088/0022-3727/40/22/R01

ZnO thin films and light-emitting diodes

Dae Kue Hwang
, Min Suk Oh
, Jae Hong Lim
, Seong Ju Park

Division of Energy Techonology

Gwangju Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

216 Scopus citations

Abstract

ZnO is attracting considerable attention for its possible application to light-emitting sources due to its advantages over GaN. We review the recent progress in the growth of ZnO epitaxial films, doping control, device fabrication processes including etching and ohmic contact formation, and finally the prospects for fabrication and characteristics of ZnO light-emitting diodes.

Original language	English
Pages (from-to)	R387-R412
Journal	Journal of Physics D: Applied Physics
Volume	40
Issue number	22
DOIs	https://doi.org/10.1088/0022-3727/40/22/R01
State	Published - 21 Nov 2007

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title = "ZnO thin films and light-emitting diodes",

abstract = "ZnO is attracting considerable attention for its possible application to light-emitting sources due to its advantages over GaN. We review the recent progress in the growth of ZnO epitaxial films, doping control, device fabrication processes including etching and ohmic contact formation, and finally the prospects for fabrication and characteristics of ZnO light-emitting diodes.",

author = "Hwang, \{Dae Kue\} and Oh, \{Min Suk\} and Lim, \{Jae Hong\} and Park, \{Seong Ju\}",

year = "2007",

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T1 - ZnO thin films and light-emitting diodes

AU - Hwang, Dae Kue

AU - Oh, Min Suk

AU - Lim, Jae Hong

AU - Park, Seong Ju

PY - 2007/11/21

Y1 - 2007/11/21

N2 - ZnO is attracting considerable attention for its possible application to light-emitting sources due to its advantages over GaN. We review the recent progress in the growth of ZnO epitaxial films, doping control, device fabrication processes including etching and ohmic contact formation, and finally the prospects for fabrication and characteristics of ZnO light-emitting diodes.

AB - ZnO is attracting considerable attention for its possible application to light-emitting sources due to its advantages over GaN. We review the recent progress in the growth of ZnO epitaxial films, doping control, device fabrication processes including etching and ohmic contact formation, and finally the prospects for fabrication and characteristics of ZnO light-emitting diodes.

UR - https://www.scopus.com/pages/publications/36448956484

U2 - 10.1088/0022-3727/40/22/R01

DO - 10.1088/0022-3727/40/22/R01

M3 - Article

AN - SCOPUS:36448956484

SN - 0022-3727

VL - 40

SP - R387-R412

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 22

ER -

ZnO thin films and light-emitting diodes

Abstract

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