ZnO nanowire and WS2 nanotube electronics

Husnu Emrah Unalan; Yang Yang; Yan Zhang; Pritesh Hiralal; Daniel Kuo; Sharvari Dalal; Tim Butler; Seung Nam Cha; Jae Eun Jang; Konstantina Chremmou; Georgios Lentaris; Di Wei; Rital Rosentsveig; Kenichi Suzuki; Hidetoshi Matsumoto; Mie Minagawa; Yasuhiko Hayashi; Manish Chhowalla; Akihiko Tanioka; William I. Milne; Reshef Tenne; Geham A.J. Amaratunga

doi:10.1109/TED.2008.2005166

ZnO nanowire and WS₂ nanotube electronics

Husnu Emrah Unalan, Yang Yang, Yan Zhang, Pritesh Hiralal, Daniel Kuo, Sharvari Dalal, Tim Butler, Seung Nam Cha, Jae Eun Jang, Konstantina Chremmou, Georgios Lentaris, Di Wei, Rital Rosentsveig, Kenichi Suzuki, Hidetoshi Matsumoto, Mie Minagawa, Yasuhiko Hayashi, Manish Chhowalla, Akihiko Tanioka, William I. MilneReshef Tenne, Geham A.J. Amaratunga

Department of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

In this paper, we report on the synthesis and applications of semiconducting nanostructures. Nanostructures of interest were zinc oxide (ZnO) nanowires and tungsten disulfide WS₂ nanotubes where transistors/phototransistors and photovoltaic (PV) energy conversion cells have been fabricated. ZnO nanowires were grown with both high- and low-temperature approaches, depending on the application. Individual ZnO nanowire side-gated transistors revealed excellent performance with a field-effect mobility of 928 cm² V·s. ZnO networks were proposed for large-area macroelectronic devices as a less lithographically intense alternative to individual nanowire transistors where mobility values in excess of 20 cm² /V·s have been achieved. Flexible PV devices utilizing ZnO nanowires as electron acceptors and for photoinduced charge separation and transport have been presented. Phototransistors were fabricated using individual WS₂ nanotubes, where clear sensitivity to visible light has been observed. The results presented here simply reveal the potential use of inorganic nanowires/tubes for various optoelectronic devices.

Original language	English
Pages (from-to)	2988-3000
Number of pages	13
Journal	IEEE Transactions on Electron Devices
Volume	55
Issue number	11
DOIs	https://doi.org/10.1109/TED.2008.2005166
State	Published - 2008

Bibliographical note

Funding Information:
Manuscript received May 12, 2008; revised August 13, 2008. Current version published October 30, 2008. The work of G. A. J. Amaratunga was supported in part by Samsung Advanced Institute of Technology, by The European Union FULMAT (Fullerene-Like Inorganic Materials) Project, by Nanobeam, and by the Nokia Research Centre. The review of this paper was arranged by Editor M. J. Kumar.

Keywords

Nanotubes
Nanowires
Solar cells
Transistors
Tungsten disulfide
Zinc oxide

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/TED.2008.2005166

Cite this

Unalan, H. E., Yang, Y., Zhang, Y., Hiralal, P., Kuo, D., Dalal, S., Butler, T., Cha, S. N., Jang, J. E., Chremmou, K., Lentaris, G., Wei, D., Rosentsveig, R., Suzuki, K., Matsumoto, H., Minagawa, M., Hayashi, Y., Chhowalla, M., Tanioka, A., ... Amaratunga, G. A. J. (2008). ZnO nanowire and WS₂ nanotube electronics. IEEE Transactions on Electron Devices, 55(11), 2988-3000. https://doi.org/10.1109/TED.2008.2005166

@article{d047efd217324f1caee6117c263dfb9f,

title = "ZnO nanowire and WS2 nanotube electronics",

abstract = "In this paper, we report on the synthesis and applications of semiconducting nanostructures. Nanostructures of interest were zinc oxide (ZnO) nanowires and tungsten disulfide WS2 nanotubes where transistors/phototransistors and photovoltaic (PV) energy conversion cells have been fabricated. ZnO nanowires were grown with both high- and low-temperature approaches, depending on the application. Individual ZnO nanowire side-gated transistors revealed excellent performance with a field-effect mobility of 928 cm2 V·s. ZnO networks were proposed for large-area macroelectronic devices as a less lithographically intense alternative to individual nanowire transistors where mobility values in excess of 20 cm2 /V·s have been achieved. Flexible PV devices utilizing ZnO nanowires as electron acceptors and for photoinduced charge separation and transport have been presented. Phototransistors were fabricated using individual WS2 nanotubes, where clear sensitivity to visible light has been observed. The results presented here simply reveal the potential use of inorganic nanowires/tubes for various optoelectronic devices.",

keywords = "Nanotubes, Nanowires, Solar cells, Transistors, Tungsten disulfide, Zinc oxide",

author = "Unalan, {Husnu Emrah} and Yang Yang and Yan Zhang and Pritesh Hiralal and Daniel Kuo and Sharvari Dalal and Tim Butler and Cha, {Seung Nam} and Jang, {Jae Eun} and Konstantina Chremmou and Georgios Lentaris and Di Wei and Rital Rosentsveig and Kenichi Suzuki and Hidetoshi Matsumoto and Mie Minagawa and Yasuhiko Hayashi and Manish Chhowalla and Akihiko Tanioka and Milne, {William I.} and Reshef Tenne and Amaratunga, {Geham A.J.}",

note = "Funding Information: Manuscript received May 12, 2008; revised August 13, 2008. Current version published October 30, 2008. The work of G. A. J. Amaratunga was supported in part by Samsung Advanced Institute of Technology, by The European Union FULMAT (Fullerene-Like Inorganic Materials) Project, by Nanobeam, and by the Nokia Research Centre. The review of this paper was arranged by Editor M. J. Kumar.",

year = "2008",

doi = "10.1109/TED.2008.2005166",

language = "English",

volume = "55",

pages = "2988--3000",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

Unalan, HE, Yang, Y, Zhang, Y, Hiralal, P, Kuo, D, Dalal, S, Butler, T, Cha, SN, Jang, JE, Chremmou, K, Lentaris, G, Wei, D, Rosentsveig, R, Suzuki, K, Matsumoto, H, Minagawa, M, Hayashi, Y, Chhowalla, M, Tanioka, A, Milne, WI, Tenne, R & Amaratunga, GAJ 2008, 'ZnO nanowire and WS₂ nanotube electronics', IEEE Transactions on Electron Devices, vol. 55, no. 11, pp. 2988-3000. https://doi.org/10.1109/TED.2008.2005166

TY - JOUR

T1 - ZnO nanowire and WS2 nanotube electronics

AU - Unalan, Husnu Emrah

AU - Yang, Yang

AU - Zhang, Yan

AU - Hiralal, Pritesh

AU - Kuo, Daniel

AU - Dalal, Sharvari

AU - Butler, Tim

AU - Cha, Seung Nam

AU - Jang, Jae Eun

AU - Chremmou, Konstantina

AU - Lentaris, Georgios

AU - Wei, Di

AU - Rosentsveig, Rital

AU - Suzuki, Kenichi

AU - Matsumoto, Hidetoshi

AU - Minagawa, Mie

AU - Hayashi, Yasuhiko

AU - Chhowalla, Manish

AU - Tanioka, Akihiko

AU - Milne, William I.

AU - Tenne, Reshef

AU - Amaratunga, Geham A.J.

N1 - Funding Information: Manuscript received May 12, 2008; revised August 13, 2008. Current version published October 30, 2008. The work of G. A. J. Amaratunga was supported in part by Samsung Advanced Institute of Technology, by The European Union FULMAT (Fullerene-Like Inorganic Materials) Project, by Nanobeam, and by the Nokia Research Centre. The review of this paper was arranged by Editor M. J. Kumar.

PY - 2008

Y1 - 2008

N2 - In this paper, we report on the synthesis and applications of semiconducting nanostructures. Nanostructures of interest were zinc oxide (ZnO) nanowires and tungsten disulfide WS2 nanotubes where transistors/phototransistors and photovoltaic (PV) energy conversion cells have been fabricated. ZnO nanowires were grown with both high- and low-temperature approaches, depending on the application. Individual ZnO nanowire side-gated transistors revealed excellent performance with a field-effect mobility of 928 cm2 V·s. ZnO networks were proposed for large-area macroelectronic devices as a less lithographically intense alternative to individual nanowire transistors where mobility values in excess of 20 cm2 /V·s have been achieved. Flexible PV devices utilizing ZnO nanowires as electron acceptors and for photoinduced charge separation and transport have been presented. Phototransistors were fabricated using individual WS2 nanotubes, where clear sensitivity to visible light has been observed. The results presented here simply reveal the potential use of inorganic nanowires/tubes for various optoelectronic devices.

AB - In this paper, we report on the synthesis and applications of semiconducting nanostructures. Nanostructures of interest were zinc oxide (ZnO) nanowires and tungsten disulfide WS2 nanotubes where transistors/phototransistors and photovoltaic (PV) energy conversion cells have been fabricated. ZnO nanowires were grown with both high- and low-temperature approaches, depending on the application. Individual ZnO nanowire side-gated transistors revealed excellent performance with a field-effect mobility of 928 cm2 V·s. ZnO networks were proposed for large-area macroelectronic devices as a less lithographically intense alternative to individual nanowire transistors where mobility values in excess of 20 cm2 /V·s have been achieved. Flexible PV devices utilizing ZnO nanowires as electron acceptors and for photoinduced charge separation and transport have been presented. Phototransistors were fabricated using individual WS2 nanotubes, where clear sensitivity to visible light has been observed. The results presented here simply reveal the potential use of inorganic nanowires/tubes for various optoelectronic devices.

KW - Nanotubes

KW - Nanowires

KW - Solar cells

KW - Transistors

KW - Tungsten disulfide

KW - Zinc oxide

UR - http://www.scopus.com/inward/record.url?scp=56549124077&partnerID=8YFLogxK

U2 - 10.1109/TED.2008.2005166

DO - 10.1109/TED.2008.2005166

M3 - Article

AN - SCOPUS:56549124077

SN - 0018-9383

VL - 55

SP - 2988

EP - 3000

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 11

ER -