ZnO-based light-emitting metal-insulator-semiconductor diodes

Dae Kue Hwang; Min Suk Oh; Jae Hong Lim; Yong Seok Choi; Seong Ju Park

doi:10.1063/1.2786603

ZnO-based light-emitting metal-insulator-semiconductor diodes

Dae Kue Hwang
, Min Suk Oh
, Jae Hong Lim
, Yong Seok Choi
, Seong Ju Park

Division of Energy Techonology

Gwangju Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

55 Scopus citations

Abstract

The ZnO-based metal-insulator-semiconductor (MIS) diode was fabricated by using an insulator ZnO layer and an n-ZnO layer grown by radio frequency magnetron sputtering. The current-voltage of the ZnO MIS diodes showed a good diode characteristic with a threshold voltage of 8.9 V and a band-edge emission at 380 nm at room temperature. The electroluminescence emission of ZnO MIS was attributed to the generation of holes in the insulating ZnO layer at the high threshold voltage of 8.9 V via an impact ionization process.

Original language	English
Article number	121113
Journal	Applied Physics Letters
Volume	91
Issue number	12
DOIs	https://doi.org/10.1063/1.2786603
State	Published - 2007

Bibliographical note

Funding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (No. R17-2007-078-01000-0), GIST Technology Initiative, and the BK 21 program in Korea.

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@article{31219347b1b44b849ac6b31c87af1a95,

title = "ZnO-based light-emitting metal-insulator-semiconductor diodes",

abstract = "The ZnO-based metal-insulator-semiconductor (MIS) diode was fabricated by using an insulator ZnO layer and an n-ZnO layer grown by radio frequency magnetron sputtering. The current-voltage of the ZnO MIS diodes showed a good diode characteristic with a threshold voltage of 8.9 V and a band-edge emission at 380 nm at room temperature. The electroluminescence emission of ZnO MIS was attributed to the generation of holes in the insulating ZnO layer at the high threshold voltage of 8.9 V via an impact ionization process.",

author = "Hwang, \{Dae Kue\} and Oh, \{Min Suk\} and Lim, \{Jae Hong\} and Choi, \{Yong Seok\} and Park, \{Seong Ju\}",

note = "Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (No. R17-2007-078-01000-0), GIST Technology Initiative, and the BK 21 program in Korea.",

year = "2007",

doi = "10.1063/1.2786603",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - ZnO-based light-emitting metal-insulator-semiconductor diodes

AU - Hwang, Dae Kue

AU - Oh, Min Suk

AU - Lim, Jae Hong

AU - Choi, Yong Seok

AU - Park, Seong Ju

N1 - Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (No. R17-2007-078-01000-0), GIST Technology Initiative, and the BK 21 program in Korea.

PY - 2007

Y1 - 2007

N2 - The ZnO-based metal-insulator-semiconductor (MIS) diode was fabricated by using an insulator ZnO layer and an n-ZnO layer grown by radio frequency magnetron sputtering. The current-voltage of the ZnO MIS diodes showed a good diode characteristic with a threshold voltage of 8.9 V and a band-edge emission at 380 nm at room temperature. The electroluminescence emission of ZnO MIS was attributed to the generation of holes in the insulating ZnO layer at the high threshold voltage of 8.9 V via an impact ionization process.

AB - The ZnO-based metal-insulator-semiconductor (MIS) diode was fabricated by using an insulator ZnO layer and an n-ZnO layer grown by radio frequency magnetron sputtering. The current-voltage of the ZnO MIS diodes showed a good diode characteristic with a threshold voltage of 8.9 V and a band-edge emission at 380 nm at room temperature. The electroluminescence emission of ZnO MIS was attributed to the generation of holes in the insulating ZnO layer at the high threshold voltage of 8.9 V via an impact ionization process.

UR - https://www.scopus.com/pages/publications/34648812805

U2 - 10.1063/1.2786603

DO - 10.1063/1.2786603

M3 - Article

AN - SCOPUS:34648812805

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 121113

ER -

ZnO-based light-emitting metal-insulator-semiconductor diodes

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