X-ray photoelectron spectroscopy study of magnetic tunnel junctions

Hyeon Jun Lee; Se Young Jeong; Chae Ryong Cho; J. H. Lee; S. J. Joo; K. H. Shin; B. C. Lee; Tae Suk Kim; J. H. Park; J. S. Kang; K. Rhie

doi:10.1063/1.1836853

X-ray photoelectron spectroscopy study of magnetic tunnel junctions

Hyeon Jun Lee, Se Young Jeong, Chae Ryong Cho, J. H. Lee, S. J. Joo, K. H. Shin, B. C. Lee, Tae Suk Kim, J. H. Park, J. S. Kang, K. Rhie

Division of Nanotechnology

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Magnetic tunnel junction (MTJ) structures were investigated by x-ray photoelectron spectroscopy. The Al layer was overoxidized and the samples were treated by rapid thermal annealing. It was found that the Mn atoms in the exchange-bias layer diffused into the magnetic layer, but did not reach the oxide barrier. Although slightly higher oxygen concentration was observed at the interface between the magnetic layer and the oxide barrier, strong evidence of the oxidized magnetic-layer interface was not found. Our result is consistent with the high tunneling magnetoresistance of MTJs at room temperature.

Original language	English
Article number	033906
Journal	Journal of Applied Physics
Volume	97
Issue number	3
DOIs	https://doi.org/10.1063/1.1836853
State	Published - 1 Feb 2005

Bibliographical note

Funding Information:
This work was supported by Korea Research Foundation Grant No. KRF-2003-042-C00038.

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@article{b79f50e403234e60b9d286a1fb1d0d10,

title = "X-ray photoelectron spectroscopy study of magnetic tunnel junctions",

abstract = "Magnetic tunnel junction (MTJ) structures were investigated by x-ray photoelectron spectroscopy. The Al layer was overoxidized and the samples were treated by rapid thermal annealing. It was found that the Mn atoms in the exchange-bias layer diffused into the magnetic layer, but did not reach the oxide barrier. Although slightly higher oxygen concentration was observed at the interface between the magnetic layer and the oxide barrier, strong evidence of the oxidized magnetic-layer interface was not found. Our result is consistent with the high tunneling magnetoresistance of MTJs at room temperature.",

author = "Lee, \{Hyeon Jun\} and Jeong, \{Se Young\} and Cho, \{Chae Ryong\} and Lee, \{J. H.\} and Joo, \{S. J.\} and Shin, \{K. H.\} and Lee, \{B. C.\} and Kim, \{Tae Suk\} and Park, \{J. H.\} and Kang, \{J. S.\} and K. Rhie",

note = "Funding Information: This work was supported by Korea Research Foundation Grant No. KRF-2003-042-C00038. ",

year = "2005",

month = feb,

day = "1",

doi = "10.1063/1.1836853",

language = "English",

volume = "97",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - X-ray photoelectron spectroscopy study of magnetic tunnel junctions

AU - Lee, Hyeon Jun

AU - Jeong, Se Young

AU - Cho, Chae Ryong

AU - Lee, J. H.

AU - Joo, S. J.

AU - Shin, K. H.

AU - Lee, B. C.

AU - Kim, Tae Suk

AU - Park, J. H.

AU - Kang, J. S.

AU - Rhie, K.

N1 - Funding Information: This work was supported by Korea Research Foundation Grant No. KRF-2003-042-C00038.

PY - 2005/2/1

Y1 - 2005/2/1

N2 - Magnetic tunnel junction (MTJ) structures were investigated by x-ray photoelectron spectroscopy. The Al layer was overoxidized and the samples were treated by rapid thermal annealing. It was found that the Mn atoms in the exchange-bias layer diffused into the magnetic layer, but did not reach the oxide barrier. Although slightly higher oxygen concentration was observed at the interface between the magnetic layer and the oxide barrier, strong evidence of the oxidized magnetic-layer interface was not found. Our result is consistent with the high tunneling magnetoresistance of MTJs at room temperature.

AB - Magnetic tunnel junction (MTJ) structures were investigated by x-ray photoelectron spectroscopy. The Al layer was overoxidized and the samples were treated by rapid thermal annealing. It was found that the Mn atoms in the exchange-bias layer diffused into the magnetic layer, but did not reach the oxide barrier. Although slightly higher oxygen concentration was observed at the interface between the magnetic layer and the oxide barrier, strong evidence of the oxidized magnetic-layer interface was not found. Our result is consistent with the high tunneling magnetoresistance of MTJs at room temperature.

UR - https://www.scopus.com/pages/publications/13644278647

U2 - 10.1063/1.1836853

DO - 10.1063/1.1836853

M3 - Article

AN - SCOPUS:13644278647

SN - 0021-8979

VL - 97

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

M1 - 033906

ER -

X-ray photoelectron spectroscopy study of magnetic tunnel junctions

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