Voltage induced magnetic anisotropy change in ultrathin Fe80 Co20 /MgO junctions with Brillouin light scattering

Seung Seok Ha; Nam Hee Kim; Sukmock Lee; Chun Yeol You; Yoichi Shiota; Takuto Maruyama; Takayuki Nozaki; Yoshishige Suzuki

doi:10.1063/1.3385732

Voltage induced magnetic anisotropy change in ultrathin Fe₈₀ Co₂₀ /MgO junctions with Brillouin light scattering

Seung Seok Ha
, Nam Hee Kim
, Sukmock Lee
, Chun Yeol You
, Yoichi Shiota
, Takuto Maruyama
, Takayuki Nozaki
, Yoshishige Suzuki

Department of Physics and Chemistry

Research output: Contribution to journal › Article › peer-review

55 Scopus citations

Abstract

We investigate voltage induced perpendicular magnetic anisotropy (PMA) changes in MgO/Cr/Au/ Fe₈₀ Co₂₀ /MgO /polyimide/ indium tin oxide (ITO). In order to observe the PMA change, spin wave frequency was measured by Brillouin light scattering with finite bias voltages applied between Au and ITO electrodes. The obtained PMA constants from spin wave frequency of Fe80 Co20 layer show clear bias voltage dependences, which agree well with the previous polar-Kerr effect measurement results and theoretical study. This study suggests spintronics devices operated by an electric field for next generation devices complying with low-power consumption.

Original language	English
Article number	142512
Journal	Applied Physics Letters
Volume	96
Issue number	14
DOIs	https://doi.org/10.1063/1.3385732
State	Published - 2010

Bibliographical note

Funding Information:
This work is supported by Nano R&D (2008-02553) programs through the NSF of Korea and CREST (J091101107) through the JST of Japan.

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title = "Voltage induced magnetic anisotropy change in ultrathin Fe80 Co20 /MgO junctions with Brillouin light scattering",

abstract = "We investigate voltage induced perpendicular magnetic anisotropy (PMA) changes in MgO/Cr/Au/ Fe80 Co20 /MgO /polyimide/ indium tin oxide (ITO). In order to observe the PMA change, spin wave frequency was measured by Brillouin light scattering with finite bias voltages applied between Au and ITO electrodes. The obtained PMA constants from spin wave frequency of Fe80 Co20 layer show clear bias voltage dependences, which agree well with the previous polar-Kerr effect measurement results and theoretical study. This study suggests spintronics devices operated by an electric field for next generation devices complying with low-power consumption.",

author = "Ha, \{Seung Seok\} and Kim, \{Nam Hee\} and Sukmock Lee and You, \{Chun Yeol\} and Yoichi Shiota and Takuto Maruyama and Takayuki Nozaki and Yoshishige Suzuki",

note = "Funding Information: This work is supported by Nano R\&D (2008-02553) programs through the NSF of Korea and CREST (J091101107) through the JST of Japan.",

year = "2010",

doi = "10.1063/1.3385732",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Voltage induced magnetic anisotropy change in ultrathin Fe80 Co20 /MgO junctions with Brillouin light scattering

AU - Ha, Seung Seok

AU - Kim, Nam Hee

AU - Lee, Sukmock

AU - You, Chun Yeol

AU - Shiota, Yoichi

AU - Maruyama, Takuto

AU - Nozaki, Takayuki

AU - Suzuki, Yoshishige

N1 - Funding Information: This work is supported by Nano R&D (2008-02553) programs through the NSF of Korea and CREST (J091101107) through the JST of Japan.

PY - 2010

Y1 - 2010

N2 - We investigate voltage induced perpendicular magnetic anisotropy (PMA) changes in MgO/Cr/Au/ Fe80 Co20 /MgO /polyimide/ indium tin oxide (ITO). In order to observe the PMA change, spin wave frequency was measured by Brillouin light scattering with finite bias voltages applied between Au and ITO electrodes. The obtained PMA constants from spin wave frequency of Fe80 Co20 layer show clear bias voltage dependences, which agree well with the previous polar-Kerr effect measurement results and theoretical study. This study suggests spintronics devices operated by an electric field for next generation devices complying with low-power consumption.

AB - We investigate voltage induced perpendicular magnetic anisotropy (PMA) changes in MgO/Cr/Au/ Fe80 Co20 /MgO /polyimide/ indium tin oxide (ITO). In order to observe the PMA change, spin wave frequency was measured by Brillouin light scattering with finite bias voltages applied between Au and ITO electrodes. The obtained PMA constants from spin wave frequency of Fe80 Co20 layer show clear bias voltage dependences, which agree well with the previous polar-Kerr effect measurement results and theoretical study. This study suggests spintronics devices operated by an electric field for next generation devices complying with low-power consumption.

UR - https://www.scopus.com/pages/publications/77951169630

U2 - 10.1063/1.3385732

DO - 10.1063/1.3385732

M3 - Article

AN - SCOPUS:77951169630

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 142512

ER -

Voltage induced magnetic anisotropy change in ultrathin Fe₈₀ Co₂₀ /MgO junctions with Brillouin light scattering

Abstract

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