Abstract
We report on the realization of voltage control of in-plane magnetic anisotropy at room temperature in ultrathin Fen-GaAs (001) Schottky junctions. Clear voltage-induced changes in magnetic anisotropy were observed in a Kerr ellipticity hysteresis loop using a lock-in modulation technique. The maximum change reached 4.5% of the saturation ellipticity under the application of a sinusoidal voltage signal of 1 V peak-to-peak in an Fe layer with a thickness of 0.64 nm. These results reveal the feasibility of controlling the in-plane magnetization process by the use of a perpendicular electric field. This can be a useful technique in ultralow power magnetization switching.
| Original language | English |
|---|---|
| Article number | 032501 |
| Journal | Applied Physics Letters |
| Volume | 94 |
| Issue number | 3 |
| DOIs | |
| State | Published - 2009 |
Bibliographical note
Funding Information:We acknowledge S. Degroote and W. van de Graaf of IMEC for preparation of the GaAs layers. This work was supported by a Grant-in-Aid from MEXT of Japan.