Abstract
The vertical thin film transistor (VTFT) has several advantages over the planar thin film transistor, such as a high current density and low operating voltage, because of the structural specificity. However, it is difficult to realize transistor operation in a VTFT because of the structural limitation that the gate field is blocked. As a solution, the conductivity modulation of a graphene electrode is studied with a micro-hole structure as a gate field transfer electrode. The micro-hole array pattern in the graphene allows better penetration of the gate field to junction and the work function to be modulated. Moreover, the patterning induces a doping effect on the graphene which results in a high barrier at the p–n junction and improves the conductivity in the device operation. The optimum performance is shown at 5 µm hole size and 30% hole ratio by analyzing the hole size and the area ratio. The proposed structure shows about 20 times higher on-current than a planar transistor with a same active area. Compared to a VTFT using simple graphene working function modulation, the proposed structure has an on-state current that is ten times higher and off-state current that is reduced 50%, and therefore has an improved on–off ratio.
Original language | English |
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Article number | 2101000 |
Journal | Advanced Electronic Materials |
Volume | 8 |
Issue number | 4 |
DOIs | |
State | Published - Apr 2022 |
Bibliographical note
Publisher Copyright:© 2021 Wiley-VCH GmbH.
Keywords
- graphene electrode
- graphene transistor
- nanometer channel
- patterned electrode
- vertical transistor