Vertical Thin Film Transistor Based on Conductivity Modulation of Graphene Electrode by Micro-Hole Patterning

Goeun Pyo, Gwang Jun Lee, Seungchul Lee, Jae Hoon Yang, Su Jin Heo, Gyeong Hyeon Choi, Seung Nam Cha, Jae Eun Jang

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

The vertical thin film transistor (VTFT) has several advantages over the planar thin film transistor, such as a high current density and low operating voltage, because of the structural specificity. However, it is difficult to realize transistor operation in a VTFT because of the structural limitation that the gate field is blocked. As a solution, the conductivity modulation of a graphene electrode is studied with a micro-hole structure as a gate field transfer electrode. The micro-hole array pattern in the graphene allows better penetration of the gate field to junction and the work function to be modulated. Moreover, the patterning induces a doping effect on the graphene which results in a high barrier at the p–n junction and improves the conductivity in the device operation. The optimum performance is shown at 5 µm hole size and 30% hole ratio by analyzing the hole size and the area ratio. The proposed structure shows about 20 times higher on-current than a planar transistor with a same active area. Compared to a VTFT using simple graphene working function modulation, the proposed structure has an on-state current that is ten times higher and off-state current that is reduced 50%, and therefore has an improved on–off ratio.

Original languageEnglish
Article number2101000
JournalAdvanced Electronic Materials
Volume8
Issue number4
DOIs
StatePublished - Apr 2022

Bibliographical note

Publisher Copyright:
© 2021 Wiley-VCH GmbH.

Keywords

  • graphene electrode
  • graphene transistor
  • nanometer channel
  • patterned electrode
  • vertical transistor

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