Universal block copolymer lithography for metals, semiconductors, ceramics, and polymers

Seong Jun Jeong, Guodong Xia, Bong Hoon Kim, Dong Ok Shin, Se Hun Kwon, Sang Won Kang, Sang Ouk Kim

Research output: Contribution to journalArticlepeer-review

144 Scopus citations

Abstract

A universal block copolymer lithography process was introduced for arbitrary functional materials such as metals, semiconductors, ceramics, and polymers. A functional substrate with uniform thickness was deposited on a silicon substrate by sputtering, chemical vapor deposition (CVD), sol-gel-casting, or atomic layer deposition (ALD). The water contact angle upon as-deposited film surface ranged from 40° to 80°, decreasing to only a few degrees after pretreatment process. SEM images show that nanotemplate consisting of surface perpendicular PMMA cylinders is polystyrene (PS) matrix assisted upon a TiO2 substrate. The large surface area of the nanoporous TiO2 is expected to provide an improved photocatalytic property, while Pt nanowires are applicable to the conductive wires for electronic devices.

Original languageEnglish
Pages (from-to)1898-1904
Number of pages7
JournalAdvanced Materials
Volume20
Issue number10
DOIs
StatePublished - 19 May 2008

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