Ultrathin silicon dioxide formation by ozone on ultraflat SI surface

A. Kurokawa; T. Maeda; K. Sakamoto; H. Itoh; K. Nakamura; K. Koike; D. W. Moon; Y. H. Ha; S. Ichimura; A. Ando

doi:10.1557/proc-567-21

Ultrathin silicon dioxide formation by ozone on ultraflat SI surface

A. Kurokawa, T. Maeda, K. Sakamoto, H. Itoh, K. Nakamura, K. Koike, D. W. Moon, Y. H. Ha, S. Ichimura, A. Ando

Department of New Biology

Research output: Contribution to journal › Conference article › peer-review

6 Scopus citations

Abstract

We prepared an atomically flat silicon substrate which had a step-terrace structure and observed the topography of the ozone-oxidized surface to clarify whether homogeneous oxidation occurs with ozone. The oxide was formed with high-concentration ozone gas with a thickness of 2.5nm at a temperature of 350°C. The oxide surface still maintained the same step-terrace structure as observed before oxidation, which revealed that ozone oxidation occurs layer-by-layer and produces an atomically flat oxide. XPS and MEIS analyses show that the stoichiometry of ozone oxide grown at 350°C is the same as that of an oxide grown thermally at 750°C.

Original language	English
Pages (from-to)	21-26
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	567
DOIs	https://doi.org/10.1557/proc-567-21
State	Published - 1999
Event	Proceedings of the 1999 MRS Spring Meeting - Symposium on Ultrathin SiO2 and High-k Materials for ULSI Gate Dielectrics - San Francisco, CA, USA Duration: 5 Apr 1999 → 8 Apr 1999

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@article{ce225798e6c545998b408da67a1473e6,

title = "Ultrathin silicon dioxide formation by ozone on ultraflat SI surface",

abstract = "We prepared an atomically flat silicon substrate which had a step-terrace structure and observed the topography of the ozone-oxidized surface to clarify whether homogeneous oxidation occurs with ozone. The oxide was formed with high-concentration ozone gas with a thickness of 2.5nm at a temperature of 350°C. The oxide surface still maintained the same step-terrace structure as observed before oxidation, which revealed that ozone oxidation occurs layer-by-layer and produces an atomically flat oxide. XPS and MEIS analyses show that the stoichiometry of ozone oxide grown at 350°C is the same as that of an oxide grown thermally at 750°C.",

author = "A. Kurokawa and T. Maeda and K. Sakamoto and H. Itoh and K. Nakamura and K. Koike and Moon, {D. W.} and Ha, {Y. H.} and S. Ichimura and A. Ando",

year = "1999",

doi = "10.1557/proc-567-21",

language = "English",

volume = "567",

pages = "21--26",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1999 MRS Spring Meeting - Symposium on Ultrathin SiO2 and High-k Materials for ULSI Gate Dielectrics ; Conference date: 05-04-1999 Through 08-04-1999",

}

TY - JOUR

T1 - Ultrathin silicon dioxide formation by ozone on ultraflat SI surface

AU - Kurokawa, A.

AU - Maeda, T.

AU - Sakamoto, K.

AU - Itoh, H.

AU - Nakamura, K.

AU - Koike, K.

AU - Moon, D. W.

AU - Ha, Y. H.

AU - Ichimura, S.

AU - Ando, A.

PY - 1999

Y1 - 1999

N2 - We prepared an atomically flat silicon substrate which had a step-terrace structure and observed the topography of the ozone-oxidized surface to clarify whether homogeneous oxidation occurs with ozone. The oxide was formed with high-concentration ozone gas with a thickness of 2.5nm at a temperature of 350°C. The oxide surface still maintained the same step-terrace structure as observed before oxidation, which revealed that ozone oxidation occurs layer-by-layer and produces an atomically flat oxide. XPS and MEIS analyses show that the stoichiometry of ozone oxide grown at 350°C is the same as that of an oxide grown thermally at 750°C.

AB - We prepared an atomically flat silicon substrate which had a step-terrace structure and observed the topography of the ozone-oxidized surface to clarify whether homogeneous oxidation occurs with ozone. The oxide was formed with high-concentration ozone gas with a thickness of 2.5nm at a temperature of 350°C. The oxide surface still maintained the same step-terrace structure as observed before oxidation, which revealed that ozone oxidation occurs layer-by-layer and produces an atomically flat oxide. XPS and MEIS analyses show that the stoichiometry of ozone oxide grown at 350°C is the same as that of an oxide grown thermally at 750°C.

UR - http://www.scopus.com/inward/record.url?scp=0033313605&partnerID=8YFLogxK

U2 - 10.1557/proc-567-21

DO - 10.1557/proc-567-21

M3 - Conference article

AN - SCOPUS:0033313605

SN - 0272-9172

VL - 567

SP - 21

EP - 26

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1999 MRS Spring Meeting - Symposium on Ultrathin SiO2 and High-k Materials for ULSI Gate Dielectrics

Y2 - 5 April 1999 through 8 April 1999

ER -

Ultrathin silicon dioxide formation by ozone on ultraflat SI surface

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