Ultrashallow p+/n junction prepared by low energy BF3 plasma doping and KrF excimer laser annealing

Dongkyu Lee, Sungkweon Baek, Sungho Heo, Changhee Cho, Gyoungho Buh, Taisu Park, Yugyun Shin, Hyunsang Hwang

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We have investigated the activation and deactivation of the 1kV BF 3 plasma doping (PLAD) with excimer laser annealing (ELA). Half of the dopants were activated by ELA, and the deactivation was dramatically increased after the postannealing. We have confirmed that 1kV BF3 PLAD did not form an amorphous layer at the substrate using X-ray transmission electron microscopy (X-TEM) and that boron and fluorine segregated after annealing using secondary ion mass spectroscopy profiles and plane-view TEM. Based on the results, we proved that fluorine can suppress boron diffusion, although it retards the activation and increases the deactivation of BF 3 PLAD with ELA.

Original languageEnglish
Pages (from-to)G19-G21
JournalElectrochemical and Solid-State Letters
Volume9
Issue number1
DOIs
StatePublished - 2006

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