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Ultrashallow P
+
/N junction formation by plasma ion implantation
S. K. Baek
, C. J. Choi
, T. Y. Seong
, H. Hwang
,
D. W. Moon
, H. K. Kim
Department of New Biology
Gwangju Institute of Science and Technology
Korea Research Institute of Standards and Science
Research output
:
Contribution to journal
›
Article
›
peer-review
5
Scopus citations
Overview
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Dive into the research topics of 'Ultrashallow P
+
/N junction formation by plasma ion implantation'. Together they form a unique fingerprint.
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Engineering
Junction Depth
100%
Ion Implantation
100%
Junction Formation
100%
Shallow Junction
66%
Si Surface
33%
Metal-Oxide-Semiconductor Field-Effect Transistor
33%
Enhanced Diffusion
33%
Sheet Resistance
33%
Channel Length
16%
Deep Level
16%
Room Temperature
16%
Speed Application
16%
Channelling
16%
Implanted Sample
16%
Drain Region
16%
Physics
Ion Implantation
100%
Blood Plasma
100%
Field Effect Transistor
18%
Metal Oxide Semiconductor
18%
Point Defect
9%
Room Temperature
9%
Transmission Electron Microscopy
9%
Material Science
Ion Implantation
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
33%
Boron Ion
33%
Boron
16%
Transmission Electron Microscopy
16%
Deep-Level Transient Spectroscopy
16%
Point Defect
16%