Ultra-shallow p+/n junction formed by plasma ion implantation

S. Baek; C. J. Choi; T. Y. Seong; H. Hwang; H. K. Kim; D. W. Moon

doi:10.1557/proc-610-b3.7

Ultra-shallow p⁺/n junction formed by plasma ion implantation

S. Baek, C. J. Choi, T. Y. Seong, H. Hwang, H. K. Kim, D. W. Moon

Department of New Biology

Gwangju Institute of Science and Technology

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

We have investigated the electrical characteristics, junction depth and defect of ultrashallow junctions formed by using a plasma doping procedure. Compared with ultralow energy boron ion implantation at 500eV, the plasma doping process exhibits both a shallow junction depth and a low sheet resistance. The junction depths of the plasma doped samples were 15 nm and 33 nm after annealing for 10s at 900°C and 950°C, respectively. For the same junction depth, the sheet resistance of the B₂H₆ plasma doped sample is an order of magnitude less than that of the 500eV B ion implanted sample. Based on cross-sectional transmission electron microscope (TEM) and deep level transient spectroscopy (DLTS) analysis, the defects formed by the B₂H₆ plasma doping process can be completely removed by annealing at 950°C for 10s.

Original language	English
Pages (from-to)	B3.7.1-B3.7.6
Journal	Materials Research Society Symposium - Proceedings
Volume	610
DOIs	https://doi.org/10.1557/proc-610-b3.7
State	Published - 2000
Event	Si Front-end Processing -Physics and Technology of Dopant-Defect Interactions II - San Francisco, CA, United States Duration: 24 Apr 2000 → 27 Apr 2000

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title = "Ultra-shallow p+/n junction formed by plasma ion implantation",

abstract = "We have investigated the electrical characteristics, junction depth and defect of ultrashallow junctions formed by using a plasma doping procedure. Compared with ultralow energy boron ion implantation at 500eV, the plasma doping process exhibits both a shallow junction depth and a low sheet resistance. The junction depths of the plasma doped samples were 15 nm and 33 nm after annealing for 10s at 900°C and 950°C, respectively. For the same junction depth, the sheet resistance of the B2H6 plasma doped sample is an order of magnitude less than that of the 500eV B ion implanted sample. Based on cross-sectional transmission electron microscope (TEM) and deep level transient spectroscopy (DLTS) analysis, the defects formed by the B2H6 plasma doping process can be completely removed by annealing at 950°C for 10s.",

author = "S. Baek and Choi, {C. J.} and Seong, {T. Y.} and H. Hwang and Kim, {H. K.} and Moon, {D. W.}",

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language = "English",

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T1 - Ultra-shallow p+/n junction formed by plasma ion implantation

AU - Baek, S.

AU - Choi, C. J.

AU - Seong, T. Y.

AU - Hwang, H.

AU - Kim, H. K.

AU - Moon, D. W.

PY - 2000

Y1 - 2000

N2 - We have investigated the electrical characteristics, junction depth and defect of ultrashallow junctions formed by using a plasma doping procedure. Compared with ultralow energy boron ion implantation at 500eV, the plasma doping process exhibits both a shallow junction depth and a low sheet resistance. The junction depths of the plasma doped samples were 15 nm and 33 nm after annealing for 10s at 900°C and 950°C, respectively. For the same junction depth, the sheet resistance of the B2H6 plasma doped sample is an order of magnitude less than that of the 500eV B ion implanted sample. Based on cross-sectional transmission electron microscope (TEM) and deep level transient spectroscopy (DLTS) analysis, the defects formed by the B2H6 plasma doping process can be completely removed by annealing at 950°C for 10s.

AB - We have investigated the electrical characteristics, junction depth and defect of ultrashallow junctions formed by using a plasma doping procedure. Compared with ultralow energy boron ion implantation at 500eV, the plasma doping process exhibits both a shallow junction depth and a low sheet resistance. The junction depths of the plasma doped samples were 15 nm and 33 nm after annealing for 10s at 900°C and 950°C, respectively. For the same junction depth, the sheet resistance of the B2H6 plasma doped sample is an order of magnitude less than that of the 500eV B ion implanted sample. Based on cross-sectional transmission electron microscope (TEM) and deep level transient spectroscopy (DLTS) analysis, the defects formed by the B2H6 plasma doping process can be completely removed by annealing at 950°C for 10s.

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U2 - 10.1557/proc-610-b3.7

DO - 10.1557/proc-610-b3.7

M3 - Conference article

AN - SCOPUS:17344387385

SN - 0272-9172

VL - 610

SP - B3.7.1-B3.7.6

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Si Front-end Processing -Physics and Technology of Dopant-Defect Interactions II

Y2 - 24 April 2000 through 27 April 2000

ER -

Ultra-shallow p⁺/n junction formed by plasma ion implantation

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