Tunneling magnetoresistance effect in a few-electron quantum-dot spin valve

K. Hamaya; M. Kitabatake; K. Shibata; M. Jung; M. Kawamura; S. Ishida; T. Taniyama; K. Hirakawa; Y. Arakawa; T. MacHida

doi:10.1063/1.3042098

Tunneling magnetoresistance effect in a few-electron quantum-dot spin valve

K. Hamaya, M. Kitabatake, K. Shibata, M. Jung, M. Kawamura, S. Ishida, T. Taniyama, K. Hirakawa, Y. Arakawa, T. MacHida

Division of Nanotechnology

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We demonstrate the tunneling magnetoresistance (TMR) effect through a semiconductor quantum dot (QD) with a few electrons in a lateral QD spin-valve device. At one-to-two electron transition, only inverse TMR effect is observed, where the TMR ratio is relatively large compared with the value based on the Julliere model. When the bias window reaches near the charging energy of the QD, the inverse TMR almost disappears. These features can be interpreted in terms of spin transport via the ground state of a two-electron QD.

Original language	English
Article number	222107
Journal	Applied Physics Letters
Volume	93
Issue number	22
DOIs	https://doi.org/10.1063/1.3042098
State	Published - 2008

Bibliographical note

Funding Information:
This work was supported by the Special Coordination Funds for Promoting Science and Technology, the Grant-in-Aid from MEXT, Japan, Collaborative Research Project of Materials and Structures Laboratory, Tokyo Institute of Technology, and the Sumitomo Foundation.

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@article{93b95a0a45b742928835cf2787fb44ae,

title = "Tunneling magnetoresistance effect in a few-electron quantum-dot spin valve",

abstract = "We demonstrate the tunneling magnetoresistance (TMR) effect through a semiconductor quantum dot (QD) with a few electrons in a lateral QD spin-valve device. At one-to-two electron transition, only inverse TMR effect is observed, where the TMR ratio is relatively large compared with the value based on the Julliere model. When the bias window reaches near the charging energy of the QD, the inverse TMR almost disappears. These features can be interpreted in terms of spin transport via the ground state of a two-electron QD.",

author = "K. Hamaya and M. Kitabatake and K. Shibata and M. Jung and M. Kawamura and S. Ishida and T. Taniyama and K. Hirakawa and Y. Arakawa and T. MacHida",

note = "Funding Information: This work was supported by the Special Coordination Funds for Promoting Science and Technology, the Grant-in-Aid from MEXT, Japan, Collaborative Research Project of Materials and Structures Laboratory, Tokyo Institute of Technology, and the Sumitomo Foundation. ",

year = "2008",

doi = "10.1063/1.3042098",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "22",

}

TY - JOUR

T1 - Tunneling magnetoresistance effect in a few-electron quantum-dot spin valve

AU - Hamaya, K.

AU - Kitabatake, M.

AU - Shibata, K.

AU - Jung, M.

AU - Kawamura, M.

AU - Ishida, S.

AU - Taniyama, T.

AU - Hirakawa, K.

AU - Arakawa, Y.

AU - MacHida, T.

N1 - Funding Information: This work was supported by the Special Coordination Funds for Promoting Science and Technology, the Grant-in-Aid from MEXT, Japan, Collaborative Research Project of Materials and Structures Laboratory, Tokyo Institute of Technology, and the Sumitomo Foundation.

PY - 2008

Y1 - 2008

N2 - We demonstrate the tunneling magnetoresistance (TMR) effect through a semiconductor quantum dot (QD) with a few electrons in a lateral QD spin-valve device. At one-to-two electron transition, only inverse TMR effect is observed, where the TMR ratio is relatively large compared with the value based on the Julliere model. When the bias window reaches near the charging energy of the QD, the inverse TMR almost disappears. These features can be interpreted in terms of spin transport via the ground state of a two-electron QD.

AB - We demonstrate the tunneling magnetoresistance (TMR) effect through a semiconductor quantum dot (QD) with a few electrons in a lateral QD spin-valve device. At one-to-two electron transition, only inverse TMR effect is observed, where the TMR ratio is relatively large compared with the value based on the Julliere model. When the bias window reaches near the charging energy of the QD, the inverse TMR almost disappears. These features can be interpreted in terms of spin transport via the ground state of a two-electron QD.

UR - http://www.scopus.com/inward/record.url?scp=57349110638&partnerID=8YFLogxK

U2 - 10.1063/1.3042098

DO - 10.1063/1.3042098

M3 - Article

AN - SCOPUS:57349110638

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 222107

ER -

Tunneling magnetoresistance effect in a few-electron quantum-dot spin valve

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