Tunable resistivity of correlated VO₂(A) and VO₂(B) via tungsten doping

Applications of correlated vanadium dioxides VO₂(A) and VO₂(B) in electrical devices are limited due to the lack of effective methods for tuning their fundamental properties. We find that the resistivity of VO₂(A) and VO₂(B) is widely tunable by doping them with tungsten ions. When x < 0.1 in V_1−xW_xO₂(A), the resistivity decreases drastically by four orders of magnitude with increasing x, while that of V_1−xW_xO₂(B) shows the opposite behaviour. Using spectroscopic ellipsometry and X-ray photoemission spectroscopy, we propose that correlation effects are modulated by either chemical-strain-induced redistribution of V−V distances or electron-doping-induced band filling in V_1−xW_xO₂(A), while electron scattering induced by disorder plays a more dominant role in V_1−xW_xO₂(B). The tunable resistivity makes correlated VO₂(A) and VO₂(B) appealing for next-generation electronic devices.