Tunable anderson localization in hydrogenated graphene based on the electric field effect

Effective control of hydrogenation of graphene is of great scientific and technological importance. However, the reversible control of H density (n _H) on graphene is difficult due to the irreversible H₂ formation of the detached H adatoms. Here we present a novel mechanism for controlling n_H by using the unique proton transfer reaction between NH₃ gas and hydrogenated graphene, which can be tuned by applying perpendicular electric fields. Using first-principles calculations, we show that n_H can be reversibly tuned by the applied electric fields around the critical density for the Anderson localization in hydrogenated graphene. The proposed field-induced control of H adsorption or desorption on graphene opens a path toward the development of new graphene transistors based on the tunable degree of disorder.