Transparent thin-film transistor and diode circuit using graphene and amorphous indium-gallium-zinc-oxide active layer

J. Kim, S. M. Jeong, J. Jeong

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

A transparent thin-film transistor-diode (TFT-diode) circuit through the serial connection of a transparent TFT and a transparent graphene diode comprised of an amorphous indium-gallium-zinc-oxide (a-IGZO) active layer and a graphene electrode are demonstrated. Through transferring the graphene electrode onto the fabricated TFT, the TFT operates in a single direction due to the directional operation of the transparent graphene diode. The resulting transparent TFT- diode device can be applied to transparent a-IGZO and graphene integrated circuits.

Original languageEnglish
Pages (from-to)2047-2049
Number of pages3
JournalElectronics Letters
Volume51
Issue number24
DOIs
StatePublished - 19 Nov 2015

Bibliographical note

Publisher Copyright:
© 2015 The Institution of Engineering and Technology.

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