Abstract
A transparent thin-film transistor-diode (TFT-diode) circuit through the serial connection of a transparent TFT and a transparent graphene diode comprised of an amorphous indium-gallium-zinc-oxide (a-IGZO) active layer and a graphene electrode are demonstrated. Through transferring the graphene electrode onto the fabricated TFT, the TFT operates in a single direction due to the directional operation of the transparent graphene diode. The resulting transparent TFT- diode device can be applied to transparent a-IGZO and graphene integrated circuits.
Original language | English |
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Pages (from-to) | 2047-2049 |
Number of pages | 3 |
Journal | Electronics Letters |
Volume | 51 |
Issue number | 24 |
DOIs | |
State | Published - 19 Nov 2015 |
Bibliographical note
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