Three synthetic routes to single-crystalline PbS nanowires with controlled growth direction and their electrical transport properties

So Young Jang, Yun Mi Song, Han Sung Kim, Yong Jae Cho, Young Suk Seo, Gyeong Bok Jung, Chi Woo Lee, Jeunghee Park, Minkyung Jung, Jinhee Kim, Bongsoo Kim, Jin Gyu Kim, Youn Joong Kim

Research output: Contribution to journalArticlepeer-review

52 Scopus citations

Abstract

Single-crystalline rock-salt PbS nanowires (NWs) were synthesized using three different routes; the solvothermal, chemical vapor transport, and gas-phase substitution reaction of pregrown CdS NWs. They were uniformly grown with the [100] or [110], [112] direction in a controlled manner. In the solvothermal growth, the oriented attachment of the octylamine (OA) ligands enables the NWs to be produced with a controlled morphology and growth direction. As the concentration of OA increases, the growth direction evolves from the [100] to the higher surface-energy [110] and [112] directions under the more thermodynamically controlled growth conditions. In the synthesis involving chemical vapor transport and the substitution reaction, the use of a lower growth temperature causes the higher surface-energy growth direction to change from [100] to [110]. The high-resolution X-ray diffraction pattern and X-ray photoelectron spectroscopy results revealed that a thinner oxide-layer was produced on the surface of the PbS NWs by the substitution reaction. We fabricated field effect transistors using single PbS NW, which showed intrinsic p-type semiconductor characteristics for all three routes. For the PbS NW with a thinner oxide layer, the carrier mobility was measured to be as high as 10 cm2 V-1 s-1.

Original languageEnglish
Pages (from-to)2391-2401
Number of pages11
JournalACS Nano
Volume4
Issue number4
DOIs
StatePublished - 27 Apr 2010

Keywords

  • Chemical vapor transport
  • Controlled growth direction
  • Field effect transistors
  • Gas-phase substitution
  • PbS nanowires
  • Solvothermal

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