Thickness dependence of exchange anisotropy in NiFe/IrMn bilayers studied by Planar Hall Effect

N. T. Thanh; M. G. Chun; N. D. Ha; K. Y. Kim; C. O. Kim; C. G. Kim

doi:10.1016/j.jmmm.2006.01.228

Thickness dependence of exchange anisotropy in NiFe/IrMn bilayers studied by Planar Hall Effect

N. T. Thanh, M. G. Chun, N. D. Ha, K. Y. Kim, C. O. Kim, C. G. Kim

Department of Physics and Chemistry

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Planar Hall Effect (PHE) in NiFe(t)/IrMn(10.0 nm) thin film structures has been experimentally investigated as a function of NiFe thickness in the range from 3 to 20 nm, under the applied magnetic field perpendicular to the easy axis. The PHE voltage change and its field sensitivity increase with NiFe thickness, but the field interval of two voltage maxima decreases with the thickness. There are good agreements between measured and calculated PHE voltage profiles, where the parameters of exchange-biased and effective anisotropy fields have been characterized to decrease with NiFe thickness. However, an anisotropic resistivity change increases as the NiFe thickness increases. These analyses suggest that PHE is the effective method, inferred to single domain, to determine the electrical and magnetic parameters in magnetic devices.

Original language	English
Pages (from-to)	432-435
Number of pages	4
Journal	Journal of Magnetism and Magnetic Materials
Volume	305
Issue number	2
DOIs	https://doi.org/10.1016/j.jmmm.2006.01.228
State	Published - Oct 2006

Bibliographical note

Funding Information:
This work was supported by KISTEP under Grant M6-032-00-0036, and KRF through BK21 program and KIST center project.

Keywords

AMR
Exchange biased-coupling
Planar Hall Effect

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10.1016/j.jmmm.2006.01.228

Cite this

@article{cb6a3b06b440489eb0ef76d70eed9acb,

title = "Thickness dependence of exchange anisotropy in NiFe/IrMn bilayers studied by Planar Hall Effect",

abstract = "Planar Hall Effect (PHE) in NiFe(t)/IrMn(10.0 nm) thin film structures has been experimentally investigated as a function of NiFe thickness in the range from 3 to 20 nm, under the applied magnetic field perpendicular to the easy axis. The PHE voltage change and its field sensitivity increase with NiFe thickness, but the field interval of two voltage maxima decreases with the thickness. There are good agreements between measured and calculated PHE voltage profiles, where the parameters of exchange-biased and effective anisotropy fields have been characterized to decrease with NiFe thickness. However, an anisotropic resistivity change increases as the NiFe thickness increases. These analyses suggest that PHE is the effective method, inferred to single domain, to determine the electrical and magnetic parameters in magnetic devices.",

keywords = "AMR, Exchange biased-coupling, Planar Hall Effect",

author = "Thanh, {N. T.} and Chun, {M. G.} and Ha, {N. D.} and Kim, {K. Y.} and Kim, {C. O.} and Kim, {C. G.}",

note = "Funding Information: This work was supported by KISTEP under Grant M6-032-00-0036, and KRF through BK21 program and KIST center project.",

year = "2006",

month = oct,

doi = "10.1016/j.jmmm.2006.01.228",

language = "English",

volume = "305",

pages = "432--435",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier B.V.",

number = "2",

}

TY - JOUR

T1 - Thickness dependence of exchange anisotropy in NiFe/IrMn bilayers studied by Planar Hall Effect

AU - Thanh, N. T.

AU - Chun, M. G.

AU - Ha, N. D.

AU - Kim, K. Y.

AU - Kim, C. O.

AU - Kim, C. G.

N1 - Funding Information: This work was supported by KISTEP under Grant M6-032-00-0036, and KRF through BK21 program and KIST center project.

PY - 2006/10

Y1 - 2006/10

N2 - Planar Hall Effect (PHE) in NiFe(t)/IrMn(10.0 nm) thin film structures has been experimentally investigated as a function of NiFe thickness in the range from 3 to 20 nm, under the applied magnetic field perpendicular to the easy axis. The PHE voltage change and its field sensitivity increase with NiFe thickness, but the field interval of two voltage maxima decreases with the thickness. There are good agreements between measured and calculated PHE voltage profiles, where the parameters of exchange-biased and effective anisotropy fields have been characterized to decrease with NiFe thickness. However, an anisotropic resistivity change increases as the NiFe thickness increases. These analyses suggest that PHE is the effective method, inferred to single domain, to determine the electrical and magnetic parameters in magnetic devices.

AB - Planar Hall Effect (PHE) in NiFe(t)/IrMn(10.0 nm) thin film structures has been experimentally investigated as a function of NiFe thickness in the range from 3 to 20 nm, under the applied magnetic field perpendicular to the easy axis. The PHE voltage change and its field sensitivity increase with NiFe thickness, but the field interval of two voltage maxima decreases with the thickness. There are good agreements between measured and calculated PHE voltage profiles, where the parameters of exchange-biased and effective anisotropy fields have been characterized to decrease with NiFe thickness. However, an anisotropic resistivity change increases as the NiFe thickness increases. These analyses suggest that PHE is the effective method, inferred to single domain, to determine the electrical and magnetic parameters in magnetic devices.

KW - AMR

KW - Exchange biased-coupling

KW - Planar Hall Effect

UR - http://www.scopus.com/inward/record.url?scp=33747782880&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2006.01.228

DO - 10.1016/j.jmmm.2006.01.228

M3 - Article

AN - SCOPUS:33747782880

SN - 0304-8853

VL - 305

SP - 432

EP - 435

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 2

ER -

Thickness dependence of exchange anisotropy in NiFe/IrMn bilayers studied by Planar Hall Effect

Abstract

Bibliographical note

Keywords

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