Thermal stability and decomposition of the HfO2Al 2O3 laminate system

Hyo Sik Chang; Hyunsang Hwang; Mann Ho Cho; Dae Won Moon; Seok Joo Doh; Jong Ho Lee; Nae In Lee

doi:10.1063/1.1637955

Thermal stability and decomposition of the HfO₂Al ₂O₃ laminate system

Hyo Sik Chang, Hyunsang Hwang, Mann Ho Cho, Dae Won Moon, Seok Joo Doh, Jong Ho Lee, Nae In Lee

Department of New Biology

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Thermal decomposition of HfO₂-Al₂O₃ nanolaminate film was discussed. The laminate stack was grown by atomic layer chemical vapor deposition and was studied by medium-energy ion scattering spectroscopy and high-resolution X-ray photoelectron spectroscopy. The experiments were performed in the ultrahigh vacuum conditions and at a temperature level of 800°C. It was found that at 850°C the quality of Hf-Al oxides was degraded and caused silicide to form on the surface.

Original language	English
Pages (from-to)	28-30
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	1
DOIs	https://doi.org/10.1063/1.1637955
State	Published - 5 Jan 2004

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title = "Thermal stability and decomposition of the HfO2Al 2O3 laminate system",

abstract = "Thermal decomposition of HfO2-Al2O3 nanolaminate film was discussed. The laminate stack was grown by atomic layer chemical vapor deposition and was studied by medium-energy ion scattering spectroscopy and high-resolution X-ray photoelectron spectroscopy. The experiments were performed in the ultrahigh vacuum conditions and at a temperature level of 800°C. It was found that at 850°C the quality of Hf-Al oxides was degraded and caused silicide to form on the surface.",

author = "Chang, {Hyo Sik} and Hyunsang Hwang and Cho, {Mann Ho} and Moon, {Dae Won} and Doh, {Seok Joo} and Lee, {Jong Ho} and Lee, {Nae In}",

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AU - Chang, Hyo Sik

AU - Hwang, Hyunsang

AU - Cho, Mann Ho

AU - Moon, Dae Won

AU - Doh, Seok Joo

AU - Lee, Jong Ho

AU - Lee, Nae In

PY - 2004/1/5

Y1 - 2004/1/5

N2 - Thermal decomposition of HfO2-Al2O3 nanolaminate film was discussed. The laminate stack was grown by atomic layer chemical vapor deposition and was studied by medium-energy ion scattering spectroscopy and high-resolution X-ray photoelectron spectroscopy. The experiments were performed in the ultrahigh vacuum conditions and at a temperature level of 800°C. It was found that at 850°C the quality of Hf-Al oxides was degraded and caused silicide to form on the surface.

AB - Thermal decomposition of HfO2-Al2O3 nanolaminate film was discussed. The laminate stack was grown by atomic layer chemical vapor deposition and was studied by medium-energy ion scattering spectroscopy and high-resolution X-ray photoelectron spectroscopy. The experiments were performed in the ultrahigh vacuum conditions and at a temperature level of 800°C. It was found that at 850°C the quality of Hf-Al oxides was degraded and caused silicide to form on the surface.

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JF - Applied Physics Letters

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Thermal stability and decomposition of the HfO₂Al ₂O₃ laminate system

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