Abstract
We have measured the thermal properties of an n-type hot-pressed Bi 1.8Sb0.2Te3 alloy with a carrier concentration of 3.1 × 1019cm-3. With the adjustable parameters determined from these experimental data, the dependence of thermal properties on the carrier concentrations is investigated, using the two-band-conduction model with a mixed scattering mechanism and a small fluctuation theory. The maximum dimensionless figures of merit of the alloy in a carrier concentration range of 0.8-3 × 1019cm-3 have values over 0.7 at temperatures between 250 K and 300 K and a minimum thermal conductivity of 1 W/Km. These alloys are comparable to single crystals, showing the possibility that they provide higher thermoelectric performance than the single crystals, since their microstructure can be controlled by hot-press processing.
Original language | English |
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Pages (from-to) | 1094-1099 |
Number of pages | 6 |
Journal | Japanese Journal of Applied Physics |
Volume | 43 |
Issue number | 3 |
DOIs | |
State | Published - Mar 2004 |
Keywords
- Electrical resistivity
- Hot-pressed n-type BiSbTe alloy
- Seebeck coefficient
- Thermal conductivity
- Thermoelectric dimensionless figure of merit
- Two-conduction-band model