Thermal properties for hot-pressed n-type (Bi1-xSb x)2Te3 alloys

Hee Joong Im, Dong Hwan Kim, T. Mitani, Koo Chul Je

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8 Scopus citations

Abstract

We have measured the thermal properties of an n-type hot-pressed Bi 1.8Sb0.2Te3 alloy with a carrier concentration of 3.1 × 1019cm-3. With the adjustable parameters determined from these experimental data, the dependence of thermal properties on the carrier concentrations is investigated, using the two-band-conduction model with a mixed scattering mechanism and a small fluctuation theory. The maximum dimensionless figures of merit of the alloy in a carrier concentration range of 0.8-3 × 1019cm-3 have values over 0.7 at temperatures between 250 K and 300 K and a minimum thermal conductivity of 1 W/Km. These alloys are comparable to single crystals, showing the possibility that they provide higher thermoelectric performance than the single crystals, since their microstructure can be controlled by hot-press processing.

Original languageEnglish
Pages (from-to)1094-1099
Number of pages6
JournalJapanese Journal of Applied Physics
Volume43
Issue number3
DOIs
StatePublished - Mar 2004

Keywords

  • Electrical resistivity
  • Hot-pressed n-type BiSbTe alloy
  • Seebeck coefficient
  • Thermal conductivity
  • Thermoelectric dimensionless figure of merit
  • Two-conduction-band model

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