The surface transient effect in the Si sputtering yield by low energy O2+ and Ar+ ion bombardments

Hyung Ik Lee; Dae Won Moon; Hye Chung Shin; Suhk Kun Oh; Hee Jae Kang

doi:10.1016/j.nimb.2004.01.196

The surface transient effect in the Si sputtering yield by low energy O₂⁺ and Ar⁺ ion bombardments

Hyung Ik Lee, Dae Won Moon, Hye Chung Shin, Suhk Kun Oh, Hee Jae Kang

Department of New Biology

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

The surface transient effects in the sputtering yield in amorphous Si layers by 0.5 keV O₂⁺ and Ar⁺ ion bombardments have been studied by MEIS. In the case of O₂⁺ ion bombardment, the surface transient effects cause rapid decrease in sputtering yield, even when the grazing incident angle is used, because of oxide layers formed by oxygen ion beam. In the case of Ar⁺ ion bombardment at the surface normal incidence, implanted Ar atoms, distributed up to 3 nm, increase sputtering rate significantly in the surface transition region. For the incident angle of 70°, there are little implanted Ar atoms, which suggests that the surface transient effect may be insignificant in sputtering conditions when 0.5 keV Ar⁺ ion bombardment with grazing angle of 70° from surface normal incidence was used.

Original language	English
Pages (from-to)	959-962
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	219-220
Issue number	1-4
DOIs	https://doi.org/10.1016/j.nimb.2004.01.196
State	Published - Jun 2004
Event	Proceedings of the Sixteenth International Conference on Ion - Albuquerque, NM., United States Duration: 29 Jun 2003 → 4 Jul 2003

Bibliographical note

Funding Information:
This work was supported by Korea Research Foundation grant (KRF-2001-005-D20009), KOSEF through ASSRC at Yonsei University.

Keywords

Depth profiling
Sputtering yield
Transient effect

Access to Document

10.1016/j.nimb.2004.01.196

Cite this

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title = "The surface transient effect in the Si sputtering yield by low energy O2+ and Ar+ ion bombardments",

abstract = "The surface transient effects in the sputtering yield in amorphous Si layers by 0.5 keV O2+ and Ar+ ion bombardments have been studied by MEIS. In the case of O2+ ion bombardment, the surface transient effects cause rapid decrease in sputtering yield, even when the grazing incident angle is used, because of oxide layers formed by oxygen ion beam. In the case of Ar+ ion bombardment at the surface normal incidence, implanted Ar atoms, distributed up to 3 nm, increase sputtering rate significantly in the surface transition region. For the incident angle of 70°, there are little implanted Ar atoms, which suggests that the surface transient effect may be insignificant in sputtering conditions when 0.5 keV Ar+ ion bombardment with grazing angle of 70° from surface normal incidence was used.",

keywords = "Depth profiling, Sputtering yield, Transient effect",

author = "Lee, {Hyung Ik} and Moon, {Dae Won} and Shin, {Hye Chung} and Oh, {Suhk Kun} and Kang, {Hee Jae}",

note = "Funding Information: This work was supported by Korea Research Foundation grant (KRF-2001-005-D20009), KOSEF through ASSRC at Yonsei University.; Proceedings of the Sixteenth International Conference on Ion ; Conference date: 29-06-2003 Through 04-07-2003",

year = "2004",

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doi = "10.1016/j.nimb.2004.01.196",

language = "English",

volume = "219-220",

pages = "959--962",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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}

The surface transient effect in the Si sputtering yield by low energy O₂⁺ and Ar⁺ ion bombardments. / Lee, Hyung Ik; Moon, Dae Won; Shin, Hye Chung et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 219-220, No. 1-4, 06.2004, p. 959-962.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - The surface transient effect in the Si sputtering yield by low energy O2+ and Ar+ ion bombardments

AU - Lee, Hyung Ik

AU - Moon, Dae Won

AU - Shin, Hye Chung

AU - Oh, Suhk Kun

AU - Kang, Hee Jae

N1 - Funding Information: This work was supported by Korea Research Foundation grant (KRF-2001-005-D20009), KOSEF through ASSRC at Yonsei University.

PY - 2004/6

Y1 - 2004/6

N2 - The surface transient effects in the sputtering yield in amorphous Si layers by 0.5 keV O2+ and Ar+ ion bombardments have been studied by MEIS. In the case of O2+ ion bombardment, the surface transient effects cause rapid decrease in sputtering yield, even when the grazing incident angle is used, because of oxide layers formed by oxygen ion beam. In the case of Ar+ ion bombardment at the surface normal incidence, implanted Ar atoms, distributed up to 3 nm, increase sputtering rate significantly in the surface transition region. For the incident angle of 70°, there are little implanted Ar atoms, which suggests that the surface transient effect may be insignificant in sputtering conditions when 0.5 keV Ar+ ion bombardment with grazing angle of 70° from surface normal incidence was used.

AB - The surface transient effects in the sputtering yield in amorphous Si layers by 0.5 keV O2+ and Ar+ ion bombardments have been studied by MEIS. In the case of O2+ ion bombardment, the surface transient effects cause rapid decrease in sputtering yield, even when the grazing incident angle is used, because of oxide layers formed by oxygen ion beam. In the case of Ar+ ion bombardment at the surface normal incidence, implanted Ar atoms, distributed up to 3 nm, increase sputtering rate significantly in the surface transition region. For the incident angle of 70°, there are little implanted Ar atoms, which suggests that the surface transient effect may be insignificant in sputtering conditions when 0.5 keV Ar+ ion bombardment with grazing angle of 70° from surface normal incidence was used.

KW - Depth profiling

KW - Sputtering yield

KW - Transient effect

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