The structural and optical behaviors of K-doped ZnO/Al2O 3(0001) films

Sung Kyu Kim; Shin Ae Kim; Chang Hee Lee; Hyeon Jun Lee; Se Young Jeong; Chae Ryong Cho

doi:10.1063/1.1773612

The structural and optical behaviors of K-doped ZnO/Al₂O ₃(0001) films

Sung Kyu Kim
, Shin Ae Kim
, Chang Hee Lee
, Hyeon Jun Lee
, Se Young Jeong
, Chae Ryong Cho

Division of Nanotechnology

Research output: Contribution to journal › Article › peer-review

59 Scopus citations

Abstract

The K-doped ZnO films were deposited on Al₂O₃ substrates by solution deposition method with different mole rates. The inconsistent behavior for doping concentrations below 2 mol % and above 2 mol % was investigated. It was observed that with an increase in doping concentration up to 2 mol %, the crystallinity increases along with the optical band gap and carrier concentration. Various techniques such as x-ray diffraction, transmittance spectroscopy, and x-ray photoelectron spectroscopy were used to investigate properties such as crystallinity, optical band gap, and chemical binding states. The results show that doped K in ZnO films reflects different properties at K doping concentrations below 2 mol % and above 2 mol %.

Original language	English
Pages (from-to)	419-421
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	3
DOIs	https://doi.org/10.1063/1.1773612
State	Published - 19 Jul 2004

Bibliographical note

Funding Information:
This work was supported by Grant No. R14-2002-029-01000-0 from the ABRL Program of the Korea Science and Engineering Foundation and by the Korea Ministry of Science and Technology through the Nuclear Research and Development Program.

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title = "The structural and optical behaviors of K-doped ZnO/Al2O 3(0001) films",

abstract = "The K-doped ZnO films were deposited on Al2O3 substrates by solution deposition method with different mole rates. The inconsistent behavior for doping concentrations below 2 mol \% and above 2 mol \% was investigated. It was observed that with an increase in doping concentration up to 2 mol \%, the crystallinity increases along with the optical band gap and carrier concentration. Various techniques such as x-ray diffraction, transmittance spectroscopy, and x-ray photoelectron spectroscopy were used to investigate properties such as crystallinity, optical band gap, and chemical binding states. The results show that doped K in ZnO films reflects different properties at K doping concentrations below 2 mol \% and above 2 mol \%.",

author = "Kim, \{Sung Kyu\} and Kim, \{Shin Ae\} and Lee, \{Chang Hee\} and Lee, \{Hyeon Jun\} and Jeong, \{Se Young\} and Cho, \{Chae Ryong\}",

note = "Funding Information: This work was supported by Grant No. R14-2002-029-01000-0 from the ABRL Program of the Korea Science and Engineering Foundation and by the Korea Ministry of Science and Technology through the Nuclear Research and Development Program.",

year = "2004",

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doi = "10.1063/1.1773612",

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T1 - The structural and optical behaviors of K-doped ZnO/Al2O 3(0001) films

AU - Kim, Sung Kyu

AU - Kim, Shin Ae

AU - Lee, Chang Hee

AU - Lee, Hyeon Jun

AU - Jeong, Se Young

AU - Cho, Chae Ryong

N1 - Funding Information: This work was supported by Grant No. R14-2002-029-01000-0 from the ABRL Program of the Korea Science and Engineering Foundation and by the Korea Ministry of Science and Technology through the Nuclear Research and Development Program.

PY - 2004/7/19

Y1 - 2004/7/19

N2 - The K-doped ZnO films were deposited on Al2O3 substrates by solution deposition method with different mole rates. The inconsistent behavior for doping concentrations below 2 mol % and above 2 mol % was investigated. It was observed that with an increase in doping concentration up to 2 mol %, the crystallinity increases along with the optical band gap and carrier concentration. Various techniques such as x-ray diffraction, transmittance spectroscopy, and x-ray photoelectron spectroscopy were used to investigate properties such as crystallinity, optical band gap, and chemical binding states. The results show that doped K in ZnO films reflects different properties at K doping concentrations below 2 mol % and above 2 mol %.

AB - The K-doped ZnO films were deposited on Al2O3 substrates by solution deposition method with different mole rates. The inconsistent behavior for doping concentrations below 2 mol % and above 2 mol % was investigated. It was observed that with an increase in doping concentration up to 2 mol %, the crystallinity increases along with the optical band gap and carrier concentration. Various techniques such as x-ray diffraction, transmittance spectroscopy, and x-ray photoelectron spectroscopy were used to investigate properties such as crystallinity, optical band gap, and chemical binding states. The results show that doped K in ZnO films reflects different properties at K doping concentrations below 2 mol % and above 2 mol %.

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DO - 10.1063/1.1773612

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EP - 421

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

The structural and optical behaviors of K-doped ZnO/Al₂O ₃(0001) films

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