The electronic structure of Ga-vacancy in Mn-doped GaN

J. Kang; K. J. Chang

doi:10.1002/pssc.200779180

The electronic structure of Ga-vacancy in Mn-doped GaN

J. Kang
, K. J. Chang

Department of Physics and Chemistry

Korea Advanced Institute of Science and Technology

Research output: Contribution to journal › Conference article › peer-review

Abstract

Using first-principles theoretical calculations, we find that Ga-vacancies (V_Ga) strongly interact with the Mn ions in GaN and thereby significantly affect the electronic and magnetic properties. When Ga-vacancies are present in the neighbourhood of the Mn ions, a charge transfer occurs from the Mn d band to the acceptor level of V_Ga. Due to the depopulation of the Mn d band, the Fermi level is generally lowered, and ferromagnetic exchange interactions between the Mn ions are weakened, reducing the Curie temperature.

Original language	English
Pages (from-to)	3035-3037
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	5
Issue number	9
DOIs	https://doi.org/10.1002/pssc.200779180
State	Published - 2008
Event	34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan Duration: 15 Oct 2007 → 18 Oct 2007

Access to Document

10.1002/pssc.200779180

Cite this

@article{4de3eb283758474da3f587ce8ad5d8d7,

title = "The electronic structure of Ga-vacancy in Mn-doped GaN",

abstract = "Using first-principles theoretical calculations, we find that Ga-vacancies (VGa) strongly interact with the Mn ions in GaN and thereby significantly affect the electronic and magnetic properties. When Ga-vacancies are present in the neighbourhood of the Mn ions, a charge transfer occurs from the Mn d band to the acceptor level of VGa. Due to the depopulation of the Mn d band, the Fermi level is generally lowered, and ferromagnetic exchange interactions between the Mn ions are weakened, reducing the Curie temperature.",

author = "J. Kang and Chang, \{K. J.\}",

year = "2008",

doi = "10.1002/pssc.200779180",

language = "English",

volume = "5",

pages = "3035--3037",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "9",

note = "34th International Symposium on Compound Semiconductors, ISCS-2007 ; Conference date: 15-10-2007 Through 18-10-2007",

}

TY - JOUR

T1 - The electronic structure of Ga-vacancy in Mn-doped GaN

AU - Kang, J.

AU - Chang, K. J.

PY - 2008

Y1 - 2008

N2 - Using first-principles theoretical calculations, we find that Ga-vacancies (VGa) strongly interact with the Mn ions in GaN and thereby significantly affect the electronic and magnetic properties. When Ga-vacancies are present in the neighbourhood of the Mn ions, a charge transfer occurs from the Mn d band to the acceptor level of VGa. Due to the depopulation of the Mn d band, the Fermi level is generally lowered, and ferromagnetic exchange interactions between the Mn ions are weakened, reducing the Curie temperature.

AB - Using first-principles theoretical calculations, we find that Ga-vacancies (VGa) strongly interact with the Mn ions in GaN and thereby significantly affect the electronic and magnetic properties. When Ga-vacancies are present in the neighbourhood of the Mn ions, a charge transfer occurs from the Mn d band to the acceptor level of VGa. Due to the depopulation of the Mn d band, the Fermi level is generally lowered, and ferromagnetic exchange interactions between the Mn ions are weakened, reducing the Curie temperature.

UR - https://www.scopus.com/pages/publications/77951291218

U2 - 10.1002/pssc.200779180

DO - 10.1002/pssc.200779180

M3 - Conference article

AN - SCOPUS:77951291218

SN - 1862-6351

VL - 5

SP - 3035

EP - 3037

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 9

T2 - 34th International Symposium on Compound Semiconductors, ISCS-2007

Y2 - 15 October 2007 through 18 October 2007

ER -

The electronic structure of Ga-vacancy in Mn-doped GaN

Abstract

Access to Document

Other files and links

Fingerprint

Cite this