The electronic structure of Ga-vacancy in Mn-doped GaN

J. Kang, K. J. Chang

Research output: Contribution to journalConference articlepeer-review

Abstract

Using first-principles theoretical calculations, we find that Ga-vacancies (VGa) strongly interact with the Mn ions in GaN and thereby significantly affect the electronic and magnetic properties. When Ga-vacancies are present in the neighbourhood of the Mn ions, a charge transfer occurs from the Mn d band to the acceptor level of VGa. Due to the depopulation of the Mn d band, the Fermi level is generally lowered, and ferromagnetic exchange interactions between the Mn ions are weakened, reducing the Curie temperature.

Original languageEnglish
Pages (from-to)3035-3037
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number9
DOIs
StatePublished - 2008
Event34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan
Duration: 15 Oct 200718 Oct 2007

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