The effects of decomposition of CpZr(NMe2)3 on atomic layer deposition for high-k ZrO2 thin films

Eunmi Choi; Hayeong Kim; Seon Jeong Maeng; Jaebaek Lee; Dae Hwan Kim; Kyuyoung Heo; Ju Young Yun

doi:10.1016/j.mtcomm.2022.104008

The effects of decomposition of CpZr(NMe₂)₃ on atomic layer deposition for high-k ZrO₂ thin films

Eunmi Choi, Hayeong Kim, Seon Jeong Maeng, Jaebaek Lee, Dae Hwan Kim, Kyuyoung Heo, Ju Young Yun

Division of Energy Techonology

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

In this study, the thermal stability of cyclopentadienyl tris(dimethylamino)zirconium (CpZr(NMe₂)₃), a representative precursor for the deposition of ZrO₂ films, was evaluated after exposure to thermal stress. As a result, we predicted that dimethylamine, and trimethylamine may be generated when CpZr(NMe₂)₃ was heated. These impurities affect the growth of film and the properties of the film. In particular, by changing the vapor pressure of CpZr(NMe₂)₃, thin films with different characteristics are formed under the same process conditions, and consequently, the reliability of the device was also reduced. Therefore, this study demonstrates that the decomposition of precursors must be studied to develop new precursors and highly reliable thin films and devices.

Original language	English
Article number	104008
Journal	Materials Today Communications
Volume	32
DOIs	https://doi.org/10.1016/j.mtcomm.2022.104008
State	Published - Aug 2022

Bibliographical note

Publisher Copyright:
© 2022 The Authors

Keywords

Atomic layer deposition
Decomposition
High-k
Precursor
Thermal stability

Access to Document

10.1016/j.mtcomm.2022.104008

Cite this

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title = "The effects of decomposition of CpZr(NMe2)3 on atomic layer deposition for high-k ZrO2 thin films",

abstract = "In this study, the thermal stability of cyclopentadienyl tris(dimethylamino)zirconium (CpZr(NMe2)3), a representative precursor for the deposition of ZrO2 films, was evaluated after exposure to thermal stress. As a result, we predicted that dimethylamine, and trimethylamine may be generated when CpZr(NMe2)3 was heated. These impurities affect the growth of film and the properties of the film. In particular, by changing the vapor pressure of CpZr(NMe2)3, thin films with different characteristics are formed under the same process conditions, and consequently, the reliability of the device was also reduced. Therefore, this study demonstrates that the decomposition of precursors must be studied to develop new precursors and highly reliable thin films and devices.",

keywords = "Atomic layer deposition, Decomposition, High-k, Precursor, Thermal stability",

author = "Eunmi Choi and Hayeong Kim and Maeng, {Seon Jeong} and Jaebaek Lee and Kim, {Dae Hwan} and Kyuyoung Heo and Yun, {Ju Young}",

note = "Publisher Copyright: {\textcopyright} 2022 The Authors",

year = "2022",

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doi = "10.1016/j.mtcomm.2022.104008",

language = "English",

volume = "32",

journal = "Materials Today Communications",

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TY - JOUR

T1 - The effects of decomposition of CpZr(NMe2)3 on atomic layer deposition for high-k ZrO2 thin films

AU - Choi, Eunmi

AU - Kim, Hayeong

AU - Maeng, Seon Jeong

AU - Lee, Jaebaek

AU - Kim, Dae Hwan

AU - Heo, Kyuyoung

AU - Yun, Ju Young

PY - 2022/8

Y1 - 2022/8

N2 - In this study, the thermal stability of cyclopentadienyl tris(dimethylamino)zirconium (CpZr(NMe2)3), a representative precursor for the deposition of ZrO2 films, was evaluated after exposure to thermal stress. As a result, we predicted that dimethylamine, and trimethylamine may be generated when CpZr(NMe2)3 was heated. These impurities affect the growth of film and the properties of the film. In particular, by changing the vapor pressure of CpZr(NMe2)3, thin films with different characteristics are formed under the same process conditions, and consequently, the reliability of the device was also reduced. Therefore, this study demonstrates that the decomposition of precursors must be studied to develop new precursors and highly reliable thin films and devices.

AB - In this study, the thermal stability of cyclopentadienyl tris(dimethylamino)zirconium (CpZr(NMe2)3), a representative precursor for the deposition of ZrO2 films, was evaluated after exposure to thermal stress. As a result, we predicted that dimethylamine, and trimethylamine may be generated when CpZr(NMe2)3 was heated. These impurities affect the growth of film and the properties of the film. In particular, by changing the vapor pressure of CpZr(NMe2)3, thin films with different characteristics are formed under the same process conditions, and consequently, the reliability of the device was also reduced. Therefore, this study demonstrates that the decomposition of precursors must be studied to develop new precursors and highly reliable thin films and devices.

KW - Atomic layer deposition

KW - Decomposition

KW - High-k

KW - Precursor

KW - Thermal stability

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