The dose dependence of Si sputtering with low energy ions in shallow depth profiling

D. W. Moon; H. I. Lee

doi:10.1016/S0169-4332(02)00642-6

The dose dependence of Si sputtering with low energy ions in shallow depth profiling

D. W. Moon, H. I. Lee

Department of New Biology

Korea Research Institute of Standards and Science

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The transient Si sputtering yield change of an amorphous Si for normal incident 500 eV O ₂ ⁺ ion bombardment under oxygen flooding condition was measured quantitatively with in situ MEIS. The Si sputtering yield decreased very rapidly from 1.4 Si atoms/O ₂ ⁺ at the initial stage to less than 0.1 Si atoms/O ₂ ⁺ at the steady state around 2 × 10 ¹⁶ O ₂ ⁺ cm ^-2 . The change of the initial transient Si sputtering yield change corresponds to the 1.6 nm shift to the shallower depth in SIMS depth profiling.

Original language	English
Pages (from-to)	27-29
Number of pages	3
Journal	Applied Surface Science
Volume	203-204
DOIs	https://doi.org/10.1016/S0169-4332(02)00642-6
State	Published - 15 Jan 2003

Bibliographical note

Funding Information:
Financial supports from MOST of Korea through National Laboratory Project and Frontier Technology Project are appreciated.

Keywords

MEIS
Shallow junction profiling
Sputtering yield
Surface transient sputtering

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10.1016/S0169-4332(02)00642-6

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title = "The dose dependence of Si sputtering with low energy ions in shallow depth profiling",

abstract = " The transient Si sputtering yield change of an amorphous Si for normal incident 500 eV O 2 + ion bombardment under oxygen flooding condition was measured quantitatively with in situ MEIS. The Si sputtering yield decreased very rapidly from 1.4 Si atoms/O 2 + at the initial stage to less than 0.1 Si atoms/O 2 + at the steady state around 2 × 10 16 O 2 + cm -2 . The change of the initial transient Si sputtering yield change corresponds to the 1.6 nm shift to the shallower depth in SIMS depth profiling.",

keywords = "MEIS, Shallow junction profiling, Sputtering yield, Surface transient sputtering",

author = "Moon, {D. W.} and Lee, {H. I.}",

note = "Funding Information: Financial supports from MOST of Korea through National Laboratory Project and Frontier Technology Project are appreciated.",

year = "2003",

month = jan,

day = "15",

doi = "10.1016/S0169-4332(02)00642-6",

language = "English",

volume = "203-204",

pages = "27--29",

journal = "Applied Surface Science",

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TY - JOUR

T1 - The dose dependence of Si sputtering with low energy ions in shallow depth profiling

AU - Moon, D. W.

AU - Lee, H. I.

N1 - Funding Information: Financial supports from MOST of Korea through National Laboratory Project and Frontier Technology Project are appreciated.

PY - 2003/1/15

Y1 - 2003/1/15

N2 - The transient Si sputtering yield change of an amorphous Si for normal incident 500 eV O 2 + ion bombardment under oxygen flooding condition was measured quantitatively with in situ MEIS. The Si sputtering yield decreased very rapidly from 1.4 Si atoms/O 2 + at the initial stage to less than 0.1 Si atoms/O 2 + at the steady state around 2 × 10 16 O 2 + cm -2 . The change of the initial transient Si sputtering yield change corresponds to the 1.6 nm shift to the shallower depth in SIMS depth profiling.

AB - The transient Si sputtering yield change of an amorphous Si for normal incident 500 eV O 2 + ion bombardment under oxygen flooding condition was measured quantitatively with in situ MEIS. The Si sputtering yield decreased very rapidly from 1.4 Si atoms/O 2 + at the initial stage to less than 0.1 Si atoms/O 2 + at the steady state around 2 × 10 16 O 2 + cm -2 . The change of the initial transient Si sputtering yield change corresponds to the 1.6 nm shift to the shallower depth in SIMS depth profiling.

KW - MEIS

KW - Shallow junction profiling

KW - Sputtering yield

KW - Surface transient sputtering

UR - http://www.scopus.com/inward/record.url?scp=0037438047&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(02)00642-6

DO - 10.1016/S0169-4332(02)00642-6

M3 - Article

AN - SCOPUS:0037438047

SN - 0169-4332

VL - 203-204

SP - 27

EP - 29

JO - Applied Surface Science

JF - Applied Surface Science

ER -

The dose dependence of Si sputtering with low energy ions in shallow depth profiling

Abstract

Bibliographical note

Keywords

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