The dielectric properties of Pb0.65Ba0.35ZrO 3 thin films applicable to microwave tunable devices

J. S. Kim; B. H. Park; T. J. Choi; S. H. Shin; J. C. Lee; M. J. Lee; S. A. Seo; I. K. Yoo

doi:10.1080/10584580490895112

The dielectric properties of Pb_0.65Ba_0.35ZrO ₃ thin films applicable to microwave tunable devices

J. S. Kim, B. H. Park, T. J. Choi, S. H. Shin, J. C. Lee, M. J. Lee, S. A. Seo, I. K. Yoo

Division of Nanotechnology

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Pb_0.65Ba_0.35ZrO₃ (PBZ) thin films have been grown on MgO (001) substrates by pulsed-laser deposition (PLD). We have compared the structural and dielectric properties of PBZ films grown at various temperatures. A highly c-axis oriented PBZ film has been grown on a MgO (001) substrate at the deposition temperature of 550°C and has also shown the largest tunability among all the PBZ films in capacitance-voltage measurements. The tunability and dielectric loss of the PBZ film was 20% and 0.00959, respectively. In addition, we have compared the temperature coefficient of capacitance (TCC) of a PBZ film with that of a Ba_0.5Sr _0.5TiO₃ (BST) film which is a well-known material applicable to tunable microwave devices. We have confirmed that TCC value of a PBZ thin film was three-times smaller than that of a BST thin film.

Original language	English
Pages (from-to)	205-211
Number of pages	7
Journal	Integrated Ferroelectrics
Volume	66
DOIs	https://doi.org/10.1080/10584580490895112
State	Published - 2004

Bibliographical note

Funding Information:
This work was supported by National R&D Project for Nano Science and Technology (Project M1-0212-29-0000) of MOST, and grant No. R08-2003-000-10051-0 from the Basic Research Program of the Korea Science & Engineering Foundation.

Keywords

BST
Microwave tunable device
PBZ
Pulsed laser deposition
TCC
Tunability

Access to Document

10.1080/10584580490895112

Cite this

@article{4950e60bc8b048e0ae32bc9792dbc0e1,

title = "The dielectric properties of Pb0.65Ba0.35ZrO 3 thin films applicable to microwave tunable devices",

abstract = "Pb0.65Ba0.35ZrO3 (PBZ) thin films have been grown on MgO (001) substrates by pulsed-laser deposition (PLD). We have compared the structural and dielectric properties of PBZ films grown at various temperatures. A highly c-axis oriented PBZ film has been grown on a MgO (001) substrate at the deposition temperature of 550°C and has also shown the largest tunability among all the PBZ films in capacitance-voltage measurements. The tunability and dielectric loss of the PBZ film was 20% and 0.00959, respectively. In addition, we have compared the temperature coefficient of capacitance (TCC) of a PBZ film with that of a Ba0.5Sr 0.5TiO3 (BST) film which is a well-known material applicable to tunable microwave devices. We have confirmed that TCC value of a PBZ thin film was three-times smaller than that of a BST thin film.",

keywords = "BST, Microwave tunable device, PBZ, Pulsed laser deposition, TCC, Tunability",

author = "Kim, {J. S.} and Park, {B. H.} and Choi, {T. J.} and Shin, {S. H.} and Lee, {J. C.} and Lee, {M. J.} and Seo, {S. A.} and Yoo, {I. K.}",

note = "Funding Information: This work was supported by National R&D Project for Nano Science and Technology (Project M1-0212-29-0000) of MOST, and grant No. R08-2003-000-10051-0 from the Basic Research Program of the Korea Science & Engineering Foundation.",

year = "2004",

doi = "10.1080/10584580490895112",

language = "English",

volume = "66",

pages = "205--211",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

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TY - JOUR

T1 - The dielectric properties of Pb0.65Ba0.35ZrO 3 thin films applicable to microwave tunable devices

AU - Kim, J. S.

AU - Park, B. H.

AU - Choi, T. J.

AU - Shin, S. H.

AU - Lee, J. C.

AU - Lee, M. J.

AU - Seo, S. A.

AU - Yoo, I. K.

N1 - Funding Information: This work was supported by National R&D Project for Nano Science and Technology (Project M1-0212-29-0000) of MOST, and grant No. R08-2003-000-10051-0 from the Basic Research Program of the Korea Science & Engineering Foundation.

PY - 2004

Y1 - 2004

N2 - Pb0.65Ba0.35ZrO3 (PBZ) thin films have been grown on MgO (001) substrates by pulsed-laser deposition (PLD). We have compared the structural and dielectric properties of PBZ films grown at various temperatures. A highly c-axis oriented PBZ film has been grown on a MgO (001) substrate at the deposition temperature of 550°C and has also shown the largest tunability among all the PBZ films in capacitance-voltage measurements. The tunability and dielectric loss of the PBZ film was 20% and 0.00959, respectively. In addition, we have compared the temperature coefficient of capacitance (TCC) of a PBZ film with that of a Ba0.5Sr 0.5TiO3 (BST) film which is a well-known material applicable to tunable microwave devices. We have confirmed that TCC value of a PBZ thin film was three-times smaller than that of a BST thin film.

AB - Pb0.65Ba0.35ZrO3 (PBZ) thin films have been grown on MgO (001) substrates by pulsed-laser deposition (PLD). We have compared the structural and dielectric properties of PBZ films grown at various temperatures. A highly c-axis oriented PBZ film has been grown on a MgO (001) substrate at the deposition temperature of 550°C and has also shown the largest tunability among all the PBZ films in capacitance-voltage measurements. The tunability and dielectric loss of the PBZ film was 20% and 0.00959, respectively. In addition, we have compared the temperature coefficient of capacitance (TCC) of a PBZ film with that of a Ba0.5Sr 0.5TiO3 (BST) film which is a well-known material applicable to tunable microwave devices. We have confirmed that TCC value of a PBZ thin film was three-times smaller than that of a BST thin film.

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KW - Microwave tunable device

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KW - Pulsed laser deposition

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