The characteristic carrier-Er interaction distance in Er-doped a-Si/SiO2 superlattices formed by ion sputtering

Ji Hong Jhe; Jung H. Shin; Kyung Joong Kim; Dae Won Moon

doi:10.1063/1.1586458

The characteristic carrier-Er interaction distance in Er-doped a-Si/SiO₂ superlattices formed by ion sputtering

Ji Hong Jhe, Jung H. Shin, Kyung Joong Kim, Dae Won Moon

Department of New Biology

Research output: Contribution to journal › Article › peer-review

66 Scopus citations

Abstract

The interaction distance between Er³⁺ ions and carriers that excite them in Er-doped a-Si/SiO₂ superlattices was analyzed. Superlattice thin films were deposited by ion sputtering and subsequent annealing at 950 degree celcius. It was found that characteristic interaction distance was 0.5±0.1 nm, indicating the likelihood of exchange interaction between carriers and Er³⁺.

Original language	English
Pages (from-to)	4489-4491
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	25
DOIs	https://doi.org/10.1063/1.1586458
State	Published - 23 Jun 2003

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@article{04a9384ba2214a1ab662d29044851316,

title = "The characteristic carrier-Er interaction distance in Er-doped a-Si/SiO2 superlattices formed by ion sputtering",

abstract = "The interaction distance between Er3+ ions and carriers that excite them in Er-doped a-Si/SiO2 superlattices was analyzed. Superlattice thin films were deposited by ion sputtering and subsequent annealing at 950 degree celcius. It was found that characteristic interaction distance was 0.5±0.1 nm, indicating the likelihood of exchange interaction between carriers and Er3+.",

author = "Jhe, \{Ji Hong\} and Shin, \{Jung H.\} and Kim, \{Kyung Joong\} and Moon, \{Dae Won\}",

year = "2003",

month = jun,

day = "23",

doi = "10.1063/1.1586458",

language = "English",

volume = "82",

pages = "4489--4491",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "25",

}

TY - JOUR

T1 - The characteristic carrier-Er interaction distance in Er-doped a-Si/SiO2 superlattices formed by ion sputtering

AU - Jhe, Ji Hong

AU - Shin, Jung H.

AU - Kim, Kyung Joong

AU - Moon, Dae Won

PY - 2003/6/23

Y1 - 2003/6/23

N2 - The interaction distance between Er3+ ions and carriers that excite them in Er-doped a-Si/SiO2 superlattices was analyzed. Superlattice thin films were deposited by ion sputtering and subsequent annealing at 950 degree celcius. It was found that characteristic interaction distance was 0.5±0.1 nm, indicating the likelihood of exchange interaction between carriers and Er3+.

AB - The interaction distance between Er3+ ions and carriers that excite them in Er-doped a-Si/SiO2 superlattices was analyzed. Superlattice thin films were deposited by ion sputtering and subsequent annealing at 950 degree celcius. It was found that characteristic interaction distance was 0.5±0.1 nm, indicating the likelihood of exchange interaction between carriers and Er3+.

UR - https://www.scopus.com/pages/publications/0038044806

U2 - 10.1063/1.1586458

DO - 10.1063/1.1586458

M3 - Article

AN - SCOPUS:0038044806

SN - 0003-6951

VL - 82

SP - 4489

EP - 4491

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

The characteristic carrier-Er interaction distance in Er-doped a-Si/SiO₂ superlattices formed by ion sputtering

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