The characteristic carrier-Er interaction distance in Er-doped a-Si/SiO2 superlattices formed by ion sputtering

Ji Hong Jhe, Jung H. Shin, Kyung Joong Kim, Dae Won Moon

Research output: Contribution to journalArticlepeer-review

66 Scopus citations

Abstract

The interaction distance between Er3+ ions and carriers that excite them in Er-doped a-Si/SiO2 superlattices was analyzed. Superlattice thin films were deposited by ion sputtering and subsequent annealing at 950 degree celcius. It was found that characteristic interaction distance was 0.5±0.1 nm, indicating the likelihood of exchange interaction between carriers and Er3+.

Original languageEnglish
Pages (from-to)4489-4491
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number25
DOIs
StatePublished - 23 Jun 2003

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