Abstract
The interaction distance between Er3+ ions and carriers that excite them in Er-doped a-Si/SiO2 superlattices was analyzed. Superlattice thin films were deposited by ion sputtering and subsequent annealing at 950 degree celcius. It was found that characteristic interaction distance was 0.5±0.1 nm, indicating the likelihood of exchange interaction between carriers and Er3+.
Original language | English |
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Pages (from-to) | 4489-4491 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 82 |
Issue number | 25 |
DOIs | |
State | Published - 23 Jun 2003 |