The addition effects of Zr and Ta in sol-gel derived InZrZnO and InTaZnO thin film transistors

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The effects of Zr and Ta contents on characteristics of InZnO films by a sol-gel method and their thin film transistor(TFTs) have been investigated. In particular, the effect of composition variation was studied by using solutions having various metal cation ratios to optimize transistor performance.

Original languageEnglish
Title of host publication10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010
Pages476-477
Number of pages2
StatePublished - 2010
Event10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010 - Seoul, Korea, Republic of
Duration: 11 Oct 201015 Oct 2010

Publication series

NameProceedings of International Meeting on Information Display
ISSN (Print)1738-7558

Conference

Conference10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010
Country/TerritoryKorea, Republic of
CitySeoul
Period11/10/1015/10/10

Keywords

  • InTaZnO
  • InZrZnO
  • Metal oxide
  • TFTs

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