Temperature-dependence of Kondo resonance in CeSi2 studied by bulk-sensitive resonant photoemission

B. H. Choi, R. J. Jung, S. J. Oh, E. J. Cho, T. Iwasaki, A. Sekiyama, S. Imada, S. Suga, T. Muro, Y. S. Kwon

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Abstract

We performed temperature-dependent bulk-sensitive resonant photoemission spectroscopy and Ce M4,5 X-ray absorption spectroscopy (XAS) of CeSi2. The XAS data clearly show the increase of the f-level occupancy number nf as the temperature is raised, which is consistent with the non-crossing approximation calculation in the Kondo scenario. In addition, the bulk-sensitive resonant photoemission of the 4f spectral weights shows that the height of the Kondo resonance at the Fermi level relative to that of the f1 →f 0 emission peak is reduced as the temperature is raised. The Gunnarsson-Schönhammer calculation fit gives generally good agreement with the valence band spectra, and the nf values derived from the fit shows the same temperature dependence as predicted by the Kondo scenario.

Original languageEnglish
Pages (from-to)15-20
Number of pages6
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume136
Issue number1-2
DOIs
StatePublished - May 2004

Bibliographical note

Funding Information:
This work is supported in part by the Korean Science and Engineering Foundation through the Center for Strongly Correlated Materials Research (CSCMR) at Seoul National University. The experiments were performed under the approval of the Japan Synchrotron Radiation Research Institute.

Keywords

  • Resonant photoemission spectroscopy (RPES)
  • Single impurity Anderson model (SIAM)

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