Suppression of Auger Recombination by Gradient Alloying in InAs/CdSe/CdS QDs

  • Laxmi Kishore Sagar
  • , Golam Bappi
  • , Andrew Johnston
  • , Bin Chen
  • , Petar Todorović
  • , Larissa Levina
  • , Makhsud I. Saidaminov
  • , F. Pelayo García De Arquer
  • , Dae Hyun Nam
  • , Min Jae Choi
  • , Sjoerd Hoogland
  • , Oleksandr Voznyy
  • , Edward H. Sargent

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

Colloidal quantum dots are promising for low-cost optoelectronic devices such as solar cells, light-emitting diodes (LEDs), lasers, and photodetectors. InAs-based quantum dots (QDs) are well suited for near-infrared (NIR) applications; however, to date, the highest-QY InAs QDs have exhibited short biexciton Auger lifetimes of ∼<50 ps. Here, we report a band engineering strategy that doubles the Auger lifetime in InAs CQDs. By developing a continuously graded thick CdSexS1-x shell, we synthesize InAs/CdSexS1-x/CdS CQDs that enable a smooth progression from the core to the outer shell, slowing the Auger process. We report a biexciton Auger lifetime of ∼105 ps compared to 17 ps for control InAs/CdSe/CdS CQDs. This represents a 2× increase of the Auger lifetime relative to the best value reported for InAs CQDs in prior literature.

Original languageEnglish
Pages (from-to)7703-7709
Number of pages7
JournalChemistry of Materials
Volume32
Issue number18
DOIs
StatePublished - 22 Sep 2020

Bibliographical note

Publisher Copyright:
Copyright © 2020 American Chemical Society.

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