Study of transport and dielectric of resistive memory states in NiO thin film

Min Gyu Kim; Sun Man Kim; Eun Jip Choi; Seung Eon Moon; Jonghyurk Park; Hyoung Chan Kim; Bae Ho Park; Myoung Jae Lee; Sunae Seo; David H. Seo; Seung Eun Ahn; In Kyeong Yoo

doi:10.1143/JJAP.44.L1301

Study of transport and dielectric of resistive memory states in NiO thin film

Min Gyu Kim
, Sun Man Kim
, Eun Jip Choi
, Seung Eon Moon
, Jonghyurk Park
, Hyoung Chan Kim
, Bae Ho Park
, Myoung Jae Lee
, Sunae Seo
, David H. Seo
, Seung Eun Ahn
, In Kyeong Yoo

Division of Nanotechnology

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

We have measured the DC resistance R(T) and AC dielectric constant ε(ω) for the bistable high-R and low-R states of NiO thin film. The high-R state shows thermally activated resistance and Debye relaxation of ε(ω). In the low-R state, R(T) exhibits a metallic temperature dependence of R(300 K)/R(5 K) = 1.6. The value of ε(ω) is drastically different from that of the high-/? state, and we interpret it in terms of the free-carrier Drude dielectric response. The plasma frequency ω_p² in the metallic low-R state is estimated to be 1.2 × 10⁹/cm³.

Original language	English
Pages (from-to)	L1301-L1303
Journal	Japanese Journal of Applied Physics
Volume	44
Issue number	42-45
DOIs	https://doi.org/10.1143/JJAP.44.L1301
State	Published - 2005

Keywords

Debye relaxation
Drude carrier model
RRAM
Switching
Transport

Access to Document

10.1143/JJAP.44.L1301

Cite this

@article{cc0ee36e9673422da63476ad9df7c521,

title = "Study of transport and dielectric of resistive memory states in NiO thin film",

abstract = "We have measured the DC resistance R(T) and AC dielectric constant ε(ω) for the bistable high-R and low-R states of NiO thin film. The high-R state shows thermally activated resistance and Debye relaxation of ε(ω). In the low-R state, R(T) exhibits a metallic temperature dependence of R(300 K)/R(5 K) = 1.6. The value of ε(ω) is drastically different from that of the high-/? state, and we interpret it in terms of the free-carrier Drude dielectric response. The plasma frequency ωp2 in the metallic low-R state is estimated to be 1.2 × 109/cm3.",

keywords = "Debye relaxation, Drude carrier model, RRAM, Switching, Transport",

author = "Kim, \{Min Gyu\} and Kim, \{Sun Man\} and Choi, \{Eun Jip\} and Moon, \{Seung Eon\} and Jonghyurk Park and Kim, \{Hyoung Chan\} and Park, \{Bae Ho\} and Lee, \{Myoung Jae\} and Sunae Seo and Seo, \{David H.\} and Ahn, \{Seung Eun\} and Yoo, \{In Kyeong\}",

year = "2005",

doi = "10.1143/JJAP.44.L1301",

language = "English",

volume = "44",

pages = "L1301--L1303",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "42-45",

}

TY - JOUR

T1 - Study of transport and dielectric of resistive memory states in NiO thin film

AU - Kim, Min Gyu

AU - Kim, Sun Man

AU - Choi, Eun Jip

AU - Moon, Seung Eon

AU - Park, Jonghyurk

AU - Kim, Hyoung Chan

AU - Park, Bae Ho

AU - Lee, Myoung Jae

AU - Seo, Sunae

AU - Seo, David H.

AU - Ahn, Seung Eun

AU - Yoo, In Kyeong

PY - 2005

Y1 - 2005

N2 - We have measured the DC resistance R(T) and AC dielectric constant ε(ω) for the bistable high-R and low-R states of NiO thin film. The high-R state shows thermally activated resistance and Debye relaxation of ε(ω). In the low-R state, R(T) exhibits a metallic temperature dependence of R(300 K)/R(5 K) = 1.6. The value of ε(ω) is drastically different from that of the high-/? state, and we interpret it in terms of the free-carrier Drude dielectric response. The plasma frequency ωp2 in the metallic low-R state is estimated to be 1.2 × 109/cm3.

AB - We have measured the DC resistance R(T) and AC dielectric constant ε(ω) for the bistable high-R and low-R states of NiO thin film. The high-R state shows thermally activated resistance and Debye relaxation of ε(ω). In the low-R state, R(T) exhibits a metallic temperature dependence of R(300 K)/R(5 K) = 1.6. The value of ε(ω) is drastically different from that of the high-/? state, and we interpret it in terms of the free-carrier Drude dielectric response. The plasma frequency ωp2 in the metallic low-R state is estimated to be 1.2 × 109/cm3.

KW - Debye relaxation

KW - Drude carrier model

KW - RRAM

KW - Switching

KW - Transport

UR - https://www.scopus.com/pages/publications/30344481683

U2 - 10.1143/JJAP.44.L1301

DO - 10.1143/JJAP.44.L1301

M3 - Article

AN - SCOPUS:30344481683

SN - 0021-4922

VL - 44

SP - L1301-L1303

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 42-45

ER -

Study of transport and dielectric of resistive memory states in NiO thin film

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this