Study of the photoluminescence of phosphorus-doped p -type ZnO thin films grown by radio-frequency magnetron sputtering

Dae Kue Hwang; Hyun Sik Kim; Jae Hong Lim; Jin Yong Oh; Jin Ho Yang; Seong Ju Park; Kyoung Kook Kim; D. C. Look; Y. S. Park

doi:10.1063/1.1895480

Study of the photoluminescence of phosphorus-doped p -type ZnO thin films grown by radio-frequency magnetron sputtering

Dae Kue Hwang
, Hyun Sik Kim
, Jae Hong Lim
, Jin Yong Oh
, Jin Ho Yang
, Seong Ju Park
, Kyoung Kook Kim
, D. C. Look
, Y. S. Park

Division of Energy Techonology

Research output: Contribution to journal › Article › peer-review

262 Scopus citations

Abstract

Phosphorus-doped p -type ZnO thin films were grown on sapphire by radio-frequency magnetron sputtering. The photoluminescence (PL) spectra revealed an acceptor bound exciton peak at 3.355 eV and a conduction band to the acceptor transition caused by a phosphorus related level at 3.310 eV. A study of the dependence of the excitation laser power density and temperature on the characteristics of the PL spectra suggests that the emission lines at 3.310 and 3.241 eV can be attributed to a conduction band to the phosphorus-related acceptor transition and a donor to the acceptor pair transition, respectively. The acceptor energy level of the phosphorus dopant was estimated to be located 127 meV above the valence band.

Original language	English
Article number	151917
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	15
DOIs	https://doi.org/10.1063/1.1895480
State	Published - 2005

Bibliographical note

Funding Information:
This work was partially supported by the National Research Laboratory Program for Nanophotonic Semiconductors in Korea and the U.S. Air Force Office of Scientific Research .

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10.1063/1.1895480

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@article{6e5dba9b09984936b588adf5f5d7b81e,

title = "Study of the photoluminescence of phosphorus-doped p -type ZnO thin films grown by radio-frequency magnetron sputtering",

abstract = "Phosphorus-doped p -type ZnO thin films were grown on sapphire by radio-frequency magnetron sputtering. The photoluminescence (PL) spectra revealed an acceptor bound exciton peak at 3.355 eV and a conduction band to the acceptor transition caused by a phosphorus related level at 3.310 eV. A study of the dependence of the excitation laser power density and temperature on the characteristics of the PL spectra suggests that the emission lines at 3.310 and 3.241 eV can be attributed to a conduction band to the phosphorus-related acceptor transition and a donor to the acceptor pair transition, respectively. The acceptor energy level of the phosphorus dopant was estimated to be located 127 meV above the valence band.",

author = "Hwang, \{Dae Kue\} and Kim, \{Hyun Sik\} and Lim, \{Jae Hong\} and Oh, \{Jin Yong\} and Yang, \{Jin Ho\} and Park, \{Seong Ju\} and Kim, \{Kyoung Kook\} and Look, \{D. C.\} and Park, \{Y. S.\}",

note = "Funding Information: This work was partially supported by the National Research Laboratory Program for Nanophotonic Semiconductors in Korea and the U.S. Air Force Office of Scientific Research .",

year = "2005",

doi = "10.1063/1.1895480",

language = "English",

volume = "86",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

}

TY - JOUR

T1 - Study of the photoluminescence of phosphorus-doped p -type ZnO thin films grown by radio-frequency magnetron sputtering

AU - Hwang, Dae Kue

AU - Kim, Hyun Sik

AU - Lim, Jae Hong

AU - Oh, Jin Yong

AU - Yang, Jin Ho

AU - Park, Seong Ju

AU - Kim, Kyoung Kook

AU - Look, D. C.

AU - Park, Y. S.

N1 - Funding Information: This work was partially supported by the National Research Laboratory Program for Nanophotonic Semiconductors in Korea and the U.S. Air Force Office of Scientific Research .

PY - 2005

Y1 - 2005

N2 - Phosphorus-doped p -type ZnO thin films were grown on sapphire by radio-frequency magnetron sputtering. The photoluminescence (PL) spectra revealed an acceptor bound exciton peak at 3.355 eV and a conduction band to the acceptor transition caused by a phosphorus related level at 3.310 eV. A study of the dependence of the excitation laser power density and temperature on the characteristics of the PL spectra suggests that the emission lines at 3.310 and 3.241 eV can be attributed to a conduction band to the phosphorus-related acceptor transition and a donor to the acceptor pair transition, respectively. The acceptor energy level of the phosphorus dopant was estimated to be located 127 meV above the valence band.

AB - Phosphorus-doped p -type ZnO thin films were grown on sapphire by radio-frequency magnetron sputtering. The photoluminescence (PL) spectra revealed an acceptor bound exciton peak at 3.355 eV and a conduction band to the acceptor transition caused by a phosphorus related level at 3.310 eV. A study of the dependence of the excitation laser power density and temperature on the characteristics of the PL spectra suggests that the emission lines at 3.310 and 3.241 eV can be attributed to a conduction band to the phosphorus-related acceptor transition and a donor to the acceptor pair transition, respectively. The acceptor energy level of the phosphorus dopant was estimated to be located 127 meV above the valence band.

UR - https://www.scopus.com/pages/publications/20844459633

U2 - 10.1063/1.1895480

DO - 10.1063/1.1895480

M3 - Article

AN - SCOPUS:20844459633

SN - 0003-6951

VL - 86

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 151917

ER -

Study of the photoluminescence of phosphorus-doped p -type ZnO thin films grown by radio-frequency magnetron sputtering

Abstract

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