Study of diluted magnetic semiconductor: Co-doped ZnO

Hyeon Jun Lee; Se Young Jeong; Chae Ryong Cho; Chul Hong Park

doi:10.1063/1.1517405

Study of diluted magnetic semiconductor: Co-doped ZnO

Hyeon Jun Lee, Se Young Jeong, Chae Ryong Cho, Chul Hong Park

Division of Nanotechnology

Research output: Contribution to journal › Article › peer-review

716 Scopus citations

Abstract

The high-temperature ferromagnetism in Co-doped ZnO films fabricated by the sol-gel method above 350 K was reported. The results of the x-ray photoelectron spectroscopy measurements showed that Co occupied the Zn site without changing the wurtzite structure. The electronic structure of the films was also investigated through the first-principles pseudopotential plane-wave calculations.

Original language	English
Pages (from-to)	4020-4022
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	21
DOIs	https://doi.org/10.1063/1.1517405
State	Published - 18 Nov 2002

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title = "Study of diluted magnetic semiconductor: Co-doped ZnO",

abstract = "The high-temperature ferromagnetism in Co-doped ZnO films fabricated by the sol-gel method above 350 K was reported. The results of the x-ray photoelectron spectroscopy measurements showed that Co occupied the Zn site without changing the wurtzite structure. The electronic structure of the films was also investigated through the first-principles pseudopotential plane-wave calculations.",

author = "Lee, {Hyeon Jun} and Jeong, {Se Young} and Cho, {Chae Ryong} and Park, {Chul Hong}",

year = "2002",

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day = "18",

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journal = "Applied Physics Letters",

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T2 - Co-doped ZnO

AU - Lee, Hyeon Jun

AU - Jeong, Se Young

AU - Cho, Chae Ryong

AU - Park, Chul Hong

PY - 2002/11/18

Y1 - 2002/11/18

N2 - The high-temperature ferromagnetism in Co-doped ZnO films fabricated by the sol-gel method above 350 K was reported. The results of the x-ray photoelectron spectroscopy measurements showed that Co occupied the Zn site without changing the wurtzite structure. The electronic structure of the films was also investigated through the first-principles pseudopotential plane-wave calculations.

AB - The high-temperature ferromagnetism in Co-doped ZnO films fabricated by the sol-gel method above 350 K was reported. The results of the x-ray photoelectron spectroscopy measurements showed that Co occupied the Zn site without changing the wurtzite structure. The electronic structure of the films was also investigated through the first-principles pseudopotential plane-wave calculations.

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U2 - 10.1063/1.1517405

DO - 10.1063/1.1517405

M3 - Article

AN - SCOPUS:0037132259

SN - 0003-6951

VL - 81

SP - 4020

EP - 4022

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Study of diluted magnetic semiconductor: Co-doped ZnO

Abstract

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