Studies of the crystal structure of solid solutions (Sn₂)_1−x−y(GaAs)_x(ZnSe)_y, (GaAs)_1−x(ZnSe)_x grown from liquid phase

The possibility of growing (Sn₂)_1−x−y(GaAs)_x(ZnSe)_y, (GaAs)_1−x(ZnSe)_x solid solutions on a GaAs(1 0 0) substrate is shown at the temperature of the beginning of crystallization, respectively, T_OC = 570 °C and T_OC = 750 °C by the method of liquid-phase epitaxy from a limited tin solution-melt in the cooling rate range of 0.5–3 K/min. The content of the chemical composition and the perfection of the substrate-film boundary of epitaxial layers of solid solutions (Sn₂)_1−x−y(GaAs)_x(ZnSe)_y, (GaAs)_1−x(ZnSe)_x were studied using a scanning electron microscope (SEM). X-ray diffraction studies have shown that the resulting films are single-crystal with (1 0 0) orientation and have a sphalerite structure. Using a transmission electron microscope (TEM), we obtained HR TEM images of (GaAs)_1−x(ZnSe)_x poly- and single-crystal samples grown at a crystallization onset temperature T_OC = 750 °C with forced cooling at a rate of 3 deg/min. and 1 deg/min. Some electrophysical and photoelectric properties of the samples have been studied.