Abstract
Magnetic tunnel junctions(MTJ) are fabricated as a function of the input power of Al thin film. Al thin films have pseudo-crystalline structure at 30, 60, 90 W and transform into amorphous like smooth nanocrystalline state at 120 W. Junction resistance increases as the annealing temperature increases up to 250°C and decrease at 300°C at the pseudo-crystalline barrier. When the barrier has amorphous like nanocrystalline structure, optimum annealing temperature increases up to 300°C. The barrier characteristics are strongly related with the microstructure of AlOx barrier.
| Original language | English |
|---|---|
| Pages (from-to) | 1053-1056 |
| Number of pages | 4 |
| Journal | Materials Science Forum |
| Volume | 449-452 |
| Issue number | II |
| DOIs | |
| State | Published - 2004 |
| Event | Designing, Processing and Properties of Advanced Engineering Materials: Proceedings on the 3rd International Symposium on Designing, Processing and Properties of Advanced Engineering Materials - Jeju Island, Korea, Republic of Duration: 5 Nov 2003 → 8 Nov 2003 |
Keywords
- AlO
- Annealing
- Surface morphology
- Tunnel barrier