Structural, morphological, compositional, and optical properties of single step electrodeposited Cu2ZnSnS4 (CZTS) thin films for solar cell application

Seul Gi Lee; Jongmin Kim; Huyn Suk Woo; Yongcheol Jo; A. I. Inamdar; S. M. Pawar; Hyung Sang Kim; Woong Jung; Hyun Sik Im

doi:10.1016/j.cap.2013.11.028

Structural, morphological, compositional, and optical properties of single step electrodeposited Cu₂ZnSnS₄ (CZTS) thin films for solar cell application

Seul Gi Lee, Jongmin Kim, Huyn Suk Woo, Yongcheol Jo, A. I. Inamdar, S. M. Pawar, Hyung Sang Kim, Woong Jung, Hyun Sik Im

Division of Energy Techonology

Dongguk University

Research output: Contribution to journal › Article › peer-review

75 Scopus citations

Abstract

We fabricate a Cu₂ZnSnS₄ (CZTS) absorber layer, by using single step electrodeposition of CZTS precursor, deposited at -1.05 V, followed by high temperature annealing in a sulfur atmosphere. X-ray diffraction pattern indicates that the as-grown sample is amorphous in nature, and polycrystalline CZTS thin films with kesterite crystal structure have been obtained by sulfurization from 450 to 580 C. Surface morphologies of the as-grown sample show some voids with agglomerated particles. After sulfurization, the morphologies of the annealed samples become more uniform, and dense. EDAX study reveals that the sulfurized samples are nearly stoichiometric, being Cu-rich and S-deficient in composition. The band gaps of the annealed samples are found to be in the range from 1.9 to 1.5 eV.

Original language	English
Pages (from-to)	254-258
Number of pages	5
Journal	Current Applied Physics
Volume	14
Issue number	3
DOIs	https://doi.org/10.1016/j.cap.2013.11.028
State	Published - Mar 2014

Bibliographical note

Funding Information:
This work was partially supported by the National Research Foundation (NRF) of Korea grant funded by the Ministry of Education (Grant Nos. 2012R1A1A2008517 and 2012-00109 ).

Keywords

CuZnSnS (CZTS) thin films
Rapid thermal annealing
Single step electrodeposition
Solar cell
Sulfurization

Access to Document

10.1016/j.cap.2013.11.028

Cite this

@article{67decc48ea2542c5acd4e45b0fd0f751,

title = "Structural, morphological, compositional, and optical properties of single step electrodeposited Cu2ZnSnS4 (CZTS) thin films for solar cell application",

abstract = "We fabricate a Cu2ZnSnS4 (CZTS) absorber layer, by using single step electrodeposition of CZTS precursor, deposited at -1.05 V, followed by high temperature annealing in a sulfur atmosphere. X-ray diffraction pattern indicates that the as-grown sample is amorphous in nature, and polycrystalline CZTS thin films with kesterite crystal structure have been obtained by sulfurization from 450 to 580 C. Surface morphologies of the as-grown sample show some voids with agglomerated particles. After sulfurization, the morphologies of the annealed samples become more uniform, and dense. EDAX study reveals that the sulfurized samples are nearly stoichiometric, being Cu-rich and S-deficient in composition. The band gaps of the annealed samples are found to be in the range from 1.9 to 1.5 eV.",

keywords = "CuZnSnS (CZTS) thin films, Rapid thermal annealing, Single step electrodeposition, Solar cell, Sulfurization",

author = "Lee, {Seul Gi} and Jongmin Kim and Woo, {Huyn Suk} and Yongcheol Jo and Inamdar, {A. I.} and Pawar, {S. M.} and Kim, {Hyung Sang} and Woong Jung and Im, {Hyun Sik}",

note = "Funding Information: This work was partially supported by the National Research Foundation (NRF) of Korea grant funded by the Ministry of Education (Grant Nos. 2012R1A1A2008517 and 2012-00109 ).",

year = "2014",

month = mar,

doi = "10.1016/j.cap.2013.11.028",

language = "English",

volume = "14",

pages = "254--258",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier B.V.",

number = "3",

}

TY - JOUR

T1 - Structural, morphological, compositional, and optical properties of single step electrodeposited Cu2ZnSnS4 (CZTS) thin films for solar cell application

AU - Lee, Seul Gi

AU - Kim, Jongmin

AU - Woo, Huyn Suk

AU - Jo, Yongcheol

AU - Inamdar, A. I.

AU - Pawar, S. M.

AU - Kim, Hyung Sang

AU - Jung, Woong

AU - Im, Hyun Sik

N1 - Funding Information: This work was partially supported by the National Research Foundation (NRF) of Korea grant funded by the Ministry of Education (Grant Nos. 2012R1A1A2008517 and 2012-00109 ).

PY - 2014/3

Y1 - 2014/3

N2 - We fabricate a Cu2ZnSnS4 (CZTS) absorber layer, by using single step electrodeposition of CZTS precursor, deposited at -1.05 V, followed by high temperature annealing in a sulfur atmosphere. X-ray diffraction pattern indicates that the as-grown sample is amorphous in nature, and polycrystalline CZTS thin films with kesterite crystal structure have been obtained by sulfurization from 450 to 580 C. Surface morphologies of the as-grown sample show some voids with agglomerated particles. After sulfurization, the morphologies of the annealed samples become more uniform, and dense. EDAX study reveals that the sulfurized samples are nearly stoichiometric, being Cu-rich and S-deficient in composition. The band gaps of the annealed samples are found to be in the range from 1.9 to 1.5 eV.

AB - We fabricate a Cu2ZnSnS4 (CZTS) absorber layer, by using single step electrodeposition of CZTS precursor, deposited at -1.05 V, followed by high temperature annealing in a sulfur atmosphere. X-ray diffraction pattern indicates that the as-grown sample is amorphous in nature, and polycrystalline CZTS thin films with kesterite crystal structure have been obtained by sulfurization from 450 to 580 C. Surface morphologies of the as-grown sample show some voids with agglomerated particles. After sulfurization, the morphologies of the annealed samples become more uniform, and dense. EDAX study reveals that the sulfurized samples are nearly stoichiometric, being Cu-rich and S-deficient in composition. The band gaps of the annealed samples are found to be in the range from 1.9 to 1.5 eV.

KW - CuZnSnS (CZTS) thin films

KW - Rapid thermal annealing

KW - Single step electrodeposition

KW - Solar cell

KW - Sulfurization

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DO - 10.1016/j.cap.2013.11.028

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