Strong size-dependent characteristics of carrier injection in quantum-confined silicon nanocrystals

Chang Hee Cho; Sang Kyun Kim; Baek Hyun Kim; Seong Ju Park

doi:10.1063/1.3273861

Strong size-dependent characteristics of carrier injection in quantum-confined silicon nanocrystals

Chang Hee Cho, Sang Kyun Kim, Baek Hyun Kim, Seong Ju Park

Department of Physics and Chemistry

Gwangju Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We report the strong size-dependent carrier injection process in quantum-confined silicon nanocrystals embedded in silicon nitride films. As the diameter of silicon nanocrystals increases, the threshold voltage for carrier injection decreases whereas the number of injected carriers increases due to the quantum size effect. The tunneling time for the carrier injection is decreased by two orders of magnitude when the diameter of silicon nanocrystals is increased from 3.4 to 5.0 nm, and this is attributed to the enhanced nonresonant tunneling in the larger silicon nanocrystals.

Original language	English
Article number	243108
Journal	Applied Physics Letters
Volume	95
Issue number	24
DOIs	https://doi.org/10.1063/1.3273861
State	Published - 14 Dec 2009

Bibliographical note

Funding Information:
This work was partially supported by the World Class University program at the Gwangju Institute of Science and Technology through a grant provided by the Ministry of Education, Science, and Technology of Korea (Grant No. R31-2008-000-10026-0) and the Korea Science and Engineering Foundation NCRC grant funded by the Korea government (Grant No. R15-2008-006-02001-0).

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title = "Strong size-dependent characteristics of carrier injection in quantum-confined silicon nanocrystals",

abstract = "We report the strong size-dependent carrier injection process in quantum-confined silicon nanocrystals embedded in silicon nitride films. As the diameter of silicon nanocrystals increases, the threshold voltage for carrier injection decreases whereas the number of injected carriers increases due to the quantum size effect. The tunneling time for the carrier injection is decreased by two orders of magnitude when the diameter of silicon nanocrystals is increased from 3.4 to 5.0 nm, and this is attributed to the enhanced nonresonant tunneling in the larger silicon nanocrystals.",

author = "Cho, \{Chang Hee\} and Kim, \{Sang Kyun\} and Kim, \{Baek Hyun\} and Park, \{Seong Ju\}",

note = "Funding Information: This work was partially supported by the World Class University program at the Gwangju Institute of Science and Technology through a grant provided by the Ministry of Education, Science, and Technology of Korea (Grant No. R31-2008-000-10026-0) and the Korea Science and Engineering Foundation NCRC grant funded by the Korea government (Grant No. R15-2008-006-02001-0).",

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doi = "10.1063/1.3273861",

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AU - Cho, Chang Hee

AU - Kim, Sang Kyun

AU - Kim, Baek Hyun

AU - Park, Seong Ju

N1 - Funding Information: This work was partially supported by the World Class University program at the Gwangju Institute of Science and Technology through a grant provided by the Ministry of Education, Science, and Technology of Korea (Grant No. R31-2008-000-10026-0) and the Korea Science and Engineering Foundation NCRC grant funded by the Korea government (Grant No. R15-2008-006-02001-0).

PY - 2009/12/14

Y1 - 2009/12/14

N2 - We report the strong size-dependent carrier injection process in quantum-confined silicon nanocrystals embedded in silicon nitride films. As the diameter of silicon nanocrystals increases, the threshold voltage for carrier injection decreases whereas the number of injected carriers increases due to the quantum size effect. The tunneling time for the carrier injection is decreased by two orders of magnitude when the diameter of silicon nanocrystals is increased from 3.4 to 5.0 nm, and this is attributed to the enhanced nonresonant tunneling in the larger silicon nanocrystals.

AB - We report the strong size-dependent carrier injection process in quantum-confined silicon nanocrystals embedded in silicon nitride films. As the diameter of silicon nanocrystals increases, the threshold voltage for carrier injection decreases whereas the number of injected carriers increases due to the quantum size effect. The tunneling time for the carrier injection is decreased by two orders of magnitude when the diameter of silicon nanocrystals is increased from 3.4 to 5.0 nm, and this is attributed to the enhanced nonresonant tunneling in the larger silicon nanocrystals.

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DO - 10.1063/1.3273861

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SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 243108

ER -

Strong size-dependent characteristics of carrier injection in quantum-confined silicon nanocrystals

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