Strong resistance nonlinearity and third harmonic generation in the unipolar resistance switching of NiO thin films

S. B. Lee; S. C. Chae; S. H. Chang; J. S. Lee; S. Park; Y. Jo; S. Seo; B. Kahng; T. W. Noh

doi:10.1063/1.3050519

Strong resistance nonlinearity and third harmonic generation in the unipolar resistance switching of NiO thin films

S. B. Lee, S. C. Chae, S. H. Chang, J. S. Lee, S. Park, Y. Jo, S. Seo, B. Kahng, T. W. Noh

Department of Physics and Chemistry

Research output: Contribution to journal › Article › peer-review

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Abstract

We investigated third harmonic generation in NiO thin films that exhibit unipolar resistance switching. We found that low resistance states (LRSs) were strongly nonlinear with variations in the resistance R as large as 60%, which was most likely caused by the Joule heating of conducting filaments inside the films. By carefully controlling the applied dc bias, we obtained several LRSs, whose values of the third harmonic coefficient B3f were proportional to R2+w (w=2.07±0.26). This suggested that the resistance changes in the NiO films were accompanied by connectivity changes of the conducting filaments, as observed in classical percolating systems.

Original language	English
Article number	252102
Journal	Applied Physics Letters
Volume	93
Issue number	25
DOIs	https://doi.org/10.1063/1.3050519
State	Published - 2008

Bibliographical note

Funding Information:
This work was supported financially by the Creative Research Initiatives (Functionally Integrated Oxide Heterostructure) of the Ministry of Science and Technology (MOST) and the Korean Science and Engineering Foundation (KOSEF). B.K. and J.S.L. were supported by the KOSEF grant funded by the MOST (Grant No. R17-2007-073-01001-0). S.B.L. acknowledges financial support from a Seoul Science Scholarship.

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title = "Strong resistance nonlinearity and third harmonic generation in the unipolar resistance switching of NiO thin films",

abstract = "We investigated third harmonic generation in NiO thin films that exhibit unipolar resistance switching. We found that low resistance states (LRSs) were strongly nonlinear with variations in the resistance R as large as 60%, which was most likely caused by the Joule heating of conducting filaments inside the films. By carefully controlling the applied dc bias, we obtained several LRSs, whose values of the third harmonic coefficient B3f were proportional to R2+w (w=2.07±0.26). This suggested that the resistance changes in the NiO films were accompanied by connectivity changes of the conducting filaments, as observed in classical percolating systems.",

author = "Lee, {S. B.} and Chae, {S. C.} and Chang, {S. H.} and Lee, {J. S.} and S. Park and Y. Jo and S. Seo and B. Kahng and Noh, {T. W.}",

note = "Funding Information: This work was supported financially by the Creative Research Initiatives (Functionally Integrated Oxide Heterostructure) of the Ministry of Science and Technology (MOST) and the Korean Science and Engineering Foundation (KOSEF). B.K. and J.S.L. were supported by the KOSEF grant funded by the MOST (Grant No. R17-2007-073-01001-0). S.B.L. acknowledges financial support from a Seoul Science Scholarship.",

year = "2008",

doi = "10.1063/1.3050519",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Strong resistance nonlinearity and third harmonic generation in the unipolar resistance switching of NiO thin films

AU - Lee, S. B.

AU - Chae, S. C.

AU - Chang, S. H.

AU - Lee, J. S.

AU - Park, S.

AU - Jo, Y.

AU - Seo, S.

AU - Kahng, B.

AU - Noh, T. W.

N1 - Funding Information: This work was supported financially by the Creative Research Initiatives (Functionally Integrated Oxide Heterostructure) of the Ministry of Science and Technology (MOST) and the Korean Science and Engineering Foundation (KOSEF). B.K. and J.S.L. were supported by the KOSEF grant funded by the MOST (Grant No. R17-2007-073-01001-0). S.B.L. acknowledges financial support from a Seoul Science Scholarship.

PY - 2008

Y1 - 2008

N2 - We investigated third harmonic generation in NiO thin films that exhibit unipolar resistance switching. We found that low resistance states (LRSs) were strongly nonlinear with variations in the resistance R as large as 60%, which was most likely caused by the Joule heating of conducting filaments inside the films. By carefully controlling the applied dc bias, we obtained several LRSs, whose values of the third harmonic coefficient B3f were proportional to R2+w (w=2.07±0.26). This suggested that the resistance changes in the NiO films were accompanied by connectivity changes of the conducting filaments, as observed in classical percolating systems.

AB - We investigated third harmonic generation in NiO thin films that exhibit unipolar resistance switching. We found that low resistance states (LRSs) were strongly nonlinear with variations in the resistance R as large as 60%, which was most likely caused by the Joule heating of conducting filaments inside the films. By carefully controlling the applied dc bias, we obtained several LRSs, whose values of the third harmonic coefficient B3f were proportional to R2+w (w=2.07±0.26). This suggested that the resistance changes in the NiO films were accompanied by connectivity changes of the conducting filaments, as observed in classical percolating systems.

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U2 - 10.1063/1.3050519

DO - 10.1063/1.3050519

M3 - Article

AN - SCOPUS:58149147031

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VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 252102

ER -

Strong resistance nonlinearity and third harmonic generation in the unipolar resistance switching of NiO thin films

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