Strain-induced diffusion in strained SiGe/Si heterostructures

Y. S. Lim, J. Y. Lee, H. S. Kim, D. W. Moon

Research output: Contribution to journalArticlepeer-review

Abstract

Diffusivity of a strained heterostructure was theoretically investigated, and general diffusion equations with strain potential were deduced. There was an additional diffusivity by the strain potential gradient as well as by the concentration gradient. The strain-induced diffusivity was a function of concentration, and its temperature dependence was formulated. The activation energy of the strain-induced diffusivity was measured by high-resolution transmission electron microscopy. This result can be generally applied for the investigation of the diffusion in strained heterostructures.

Original languageEnglish
Pages (from-to)P1121-P11211
JournalMaterials Research Society Symposium - Proceedings
Volume648
StatePublished - 2001

Bibliographical note

Funding Information:
We acknowledge the support of this research by the Ministry of Education of Korea through the BK21 program.

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