Strain-induced anisotropic Ge diffusion in SiGe/Si superlattices

Y. S. Lim; J. Y. Lee; H. S. Kim; D. W. Moon

doi:10.1063/1.1465500

Strain-induced anisotropic Ge diffusion in SiGe/Si superlattices

Y. S. Lim
, J. Y. Lee
, H. S. Kim
, D. W. Moon

Department of New Biology

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Anisotropic diffusion of Ge induced by nonuniform strain in SiGe/Si interfaces in the range of 700-850°C is directly observed with medium-energy ion-scattering spectroscopy through its composition and strain profiles of atomic-layer depth resolution. For SiGe/Si interfaces with identical composition profiles but with different strain distributions, the anisotropic diffusion of Ge can be clearly correlated with the anisotropic relaxation of the nonuniform strain in the near-surface layer of several nm depth. The results suggest that atomic-scale strain control is critical to maintain abrupt SiGe/Si interfaces under thermal budget.

Original language	English
Pages (from-to)	2481-2483
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	14
DOIs	https://doi.org/10.1063/1.1465500
State	Published - 8 Apr 2002

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title = "Strain-induced anisotropic Ge diffusion in SiGe/Si superlattices",

abstract = "Anisotropic diffusion of Ge induced by nonuniform strain in SiGe/Si interfaces in the range of 700-850°C is directly observed with medium-energy ion-scattering spectroscopy through its composition and strain profiles of atomic-layer depth resolution. For SiGe/Si interfaces with identical composition profiles but with different strain distributions, the anisotropic diffusion of Ge can be clearly correlated with the anisotropic relaxation of the nonuniform strain in the near-surface layer of several nm depth. The results suggest that atomic-scale strain control is critical to maintain abrupt SiGe/Si interfaces under thermal budget.",

author = "Lim, \{Y. S.\} and Lee, \{J. Y.\} and Kim, \{H. S.\} and Moon, \{D. W.\}",

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T1 - Strain-induced anisotropic Ge diffusion in SiGe/Si superlattices

AU - Lim, Y. S.

AU - Lee, J. Y.

AU - Kim, H. S.

AU - Moon, D. W.

PY - 2002/4/8

Y1 - 2002/4/8

N2 - Anisotropic diffusion of Ge induced by nonuniform strain in SiGe/Si interfaces in the range of 700-850°C is directly observed with medium-energy ion-scattering spectroscopy through its composition and strain profiles of atomic-layer depth resolution. For SiGe/Si interfaces with identical composition profiles but with different strain distributions, the anisotropic diffusion of Ge can be clearly correlated with the anisotropic relaxation of the nonuniform strain in the near-surface layer of several nm depth. The results suggest that atomic-scale strain control is critical to maintain abrupt SiGe/Si interfaces under thermal budget.

AB - Anisotropic diffusion of Ge induced by nonuniform strain in SiGe/Si interfaces in the range of 700-850°C is directly observed with medium-energy ion-scattering spectroscopy through its composition and strain profiles of atomic-layer depth resolution. For SiGe/Si interfaces with identical composition profiles but with different strain distributions, the anisotropic diffusion of Ge can be clearly correlated with the anisotropic relaxation of the nonuniform strain in the near-surface layer of several nm depth. The results suggest that atomic-scale strain control is critical to maintain abrupt SiGe/Si interfaces under thermal budget.

UR - https://www.scopus.com/pages/publications/79956006859

U2 - 10.1063/1.1465500

DO - 10.1063/1.1465500

M3 - Article

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SN - 0003-6951

VL - 80

SP - 2481

EP - 2483

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Strain-induced anisotropic Ge diffusion in SiGe/Si superlattices

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