Abstract
Correlated perovskites have attracted significant attention worldwide for their potential application in transparent conductors. However, most studies in this area have focused on single-crystalline films grown on expensive perovskites. In this study, the transparent conducting properties of SrMoO3 epitaxial films grown on Al2O3, the most commonly used substrate for optoelectronics, are investigated. The 45−80-nm-thick SrMoO3 epitaxial films on (Formula presented.) -oriented Al2O3 exhibit low sheet resistance (< 50 Ω □−1) at room temperature and high ultraviolet-visible transmittances (> 60%), comparable with the values expected from single-crystalline films. The highly conductive properties induced by two electrons in the outermost 4d orbitals guarantee a high electromagnetic shielding effectiveness of approximately 28.5 dB at 10 GHz in the X-band. The SrMoO3 films are thermally stable below 450 °C in air and 700 °C in vacuum. Taken together, these results indicate that SrMoO3 epitaxial films grown on (Formula presented.) Al2O3 can be highly promising for optoelectronic applications in extreme environments.
Original language | English |
---|---|
Article number | 2200893 |
Journal | Advanced Materials Interfaces |
Volume | 9 |
Issue number | 31 |
DOIs | |
State | Published - 3 Nov 2022 |
Bibliographical note
Publisher Copyright:© 2022 Wiley-VCH GmbH.
Keywords
- Al O
- correlated perovskites
- electromagnetic shielding effectiveness
- epitaxial films
- thermal stability
- transparent conductors