Spontaneous N incorporation onto a Si(100) surface

J. W. Kim; H. W. Yeom; K. J. Kong; B. D. Yu; D. Y. Ahn; Y. D. Chung; C. N. Whang; H. Yi; Y. H. Ha; D. W. Moon

Spontaneous N incorporation onto a Si(100) surface

J. W. Kim, H. W. Yeom, K. J. Kong, B. D. Yu, D. Y. Ahn, Y. D. Chung, C. N. Whang, H. Yi, Y. H. Ha, D. W. Moon

Department of New Biology

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

Through combined experimental and theoretical investigations, it was shown that N adsorption occurs extraordinarily. Such characteristic N incorporation may also explain the mechanism of the SiO_xN_y/Si(100) interface formation with N-rich Si layers. This result shows a possibility of new low-temperature process design for ultrathin oxynitride/nitride dielectric layers.

Original language	English
Article number	106101
Pages (from-to)	106101/1-106101/4
Journal	Physical Review Letters
Volume	90
Issue number	10
State	Published - 14 Mar 2003

Bibliographical note

Funding Information:
This work is supported by KOSEF through ASSRC and Tera-level Nano Device project of 21 Century Frontier program. PAL is supported by MOST and POSCO.

Cite this

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title = "Spontaneous N incorporation onto a Si(100) surface",

abstract = "Through combined experimental and theoretical investigations, it was shown that N adsorption occurs extraordinarily. Such characteristic N incorporation may also explain the mechanism of the SiOxNy/Si(100) interface formation with N-rich Si layers. This result shows a possibility of new low-temperature process design for ultrathin oxynitride/nitride dielectric layers.",

author = "Kim, {J. W.} and Yeom, {H. W.} and Kong, {K. J.} and Yu, {B. D.} and Ahn, {D. Y.} and Chung, {Y. D.} and Whang, {C. N.} and H. Yi and Ha, {Y. H.} and Moon, {D. W.}",

note = "Funding Information: This work is supported by KOSEF through ASSRC and Tera-level Nano Device project of 21 Century Frontier program. PAL is supported by MOST and POSCO.",

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AU - Kim, J. W.

AU - Yeom, H. W.

AU - Kong, K. J.

AU - Yu, B. D.

AU - Ahn, D. Y.

AU - Chung, Y. D.

AU - Whang, C. N.

AU - Yi, H.

AU - Ha, Y. H.

AU - Moon, D. W.

N1 - Funding Information: This work is supported by KOSEF through ASSRC and Tera-level Nano Device project of 21 Century Frontier program. PAL is supported by MOST and POSCO.

PY - 2003/3/14

Y1 - 2003/3/14

N2 - Through combined experimental and theoretical investigations, it was shown that N adsorption occurs extraordinarily. Such characteristic N incorporation may also explain the mechanism of the SiOxNy/Si(100) interface formation with N-rich Si layers. This result shows a possibility of new low-temperature process design for ultrathin oxynitride/nitride dielectric layers.

AB - Through combined experimental and theoretical investigations, it was shown that N adsorption occurs extraordinarily. Such characteristic N incorporation may also explain the mechanism of the SiOxNy/Si(100) interface formation with N-rich Si layers. This result shows a possibility of new low-temperature process design for ultrathin oxynitride/nitride dielectric layers.

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M3 - Article

AN - SCOPUS:0038640284

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SP - 106101/1-106101/4

JO - Physical Review Letters

JF - Physical Review Letters

IS - 10

M1 - 106101

ER -

Spontaneous N incorporation onto a Si(100) surface

Abstract

Bibliographical note

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