Soft graphoepitaxy of block copolymer assembly with disposable photoresist confinement

Seong Jun Jeong; Ji Eun Kim; Hyoung Seok Moon; Bong Hoon Kim; Su Min Kim; Jin Baek Kim; Sang Ouk Kim

doi:10.1021/nl9004833

Soft graphoepitaxy of block copolymer assembly with disposable photoresist confinement

Seong Jun Jeong, Ji Eun Kim, Hyoung Seok Moon, Bong Hoon Kim, Su Min Kim, Jin Baek Kim, Sang Ouk Kim

Department of Robotics and Mechatronics Engineering

Korea Advanced Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

156 Scopus citations

Abstract

We demonstrate soft graphoepitaxy of block copolymer assembly as a facile, scalable nanolithography for highly ordered sub-30-nm scale features. Various morphologies of hierarchical block copolymer assembly were achieved by means of disposable topographic confinement of photoresist pattern. Unlike usual graphoepitaxy, soft graphoepitaxy generates the functional nanostructures of metal and semiconductor nanowire arrays without any trace of structure-directing topographic pattern. Our novel approach is potentially advantageous for multilayer overlay processing required for complex device architectures.

Original language	English
Pages (from-to)	2300-2305
Number of pages	6
Journal	Nano Letters
Volume	9
Issue number	6
DOIs	https://doi.org/10.1021/nl9004833
State	Published - 10 Jun 2009

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abstract = "We demonstrate soft graphoepitaxy of block copolymer assembly as a facile, scalable nanolithography for highly ordered sub-30-nm scale features. Various morphologies of hierarchical block copolymer assembly were achieved by means of disposable topographic confinement of photoresist pattern. Unlike usual graphoepitaxy, soft graphoepitaxy generates the functional nanostructures of metal and semiconductor nanowire arrays without any trace of structure-directing topographic pattern. Our novel approach is potentially advantageous for multilayer overlay processing required for complex device architectures.",

author = "Jeong, {Seong Jun} and Kim, {Ji Eun} and Moon, {Hyoung Seok} and Kim, {Bong Hoon} and Kim, {Su Min} and Kim, {Jin Baek} and Kim, {Sang Ouk}",

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AU - Jeong, Seong Jun

AU - Kim, Ji Eun

AU - Moon, Hyoung Seok

AU - Kim, Bong Hoon

AU - Kim, Su Min

AU - Kim, Jin Baek

AU - Kim, Sang Ouk

PY - 2009/6/10

Y1 - 2009/6/10

N2 - We demonstrate soft graphoepitaxy of block copolymer assembly as a facile, scalable nanolithography for highly ordered sub-30-nm scale features. Various morphologies of hierarchical block copolymer assembly were achieved by means of disposable topographic confinement of photoresist pattern. Unlike usual graphoepitaxy, soft graphoepitaxy generates the functional nanostructures of metal and semiconductor nanowire arrays without any trace of structure-directing topographic pattern. Our novel approach is potentially advantageous for multilayer overlay processing required for complex device architectures.

AB - We demonstrate soft graphoepitaxy of block copolymer assembly as a facile, scalable nanolithography for highly ordered sub-30-nm scale features. Various morphologies of hierarchical block copolymer assembly were achieved by means of disposable topographic confinement of photoresist pattern. Unlike usual graphoepitaxy, soft graphoepitaxy generates the functional nanostructures of metal and semiconductor nanowire arrays without any trace of structure-directing topographic pattern. Our novel approach is potentially advantageous for multilayer overlay processing required for complex device architectures.

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Soft graphoepitaxy of block copolymer assembly with disposable photoresist confinement

Abstract

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