Single electron transistors using single self-assembled InAs quantum dots

M. Jung, N. Sekine, K. Hirakawa, S. Ishida, Y. Arakawa, Y. Kawaguchi, S. Komiyama

Research output: Contribution to journalConference articlepeer-review

Abstract

The electron transport through single self-assembled InAs quantum dots (QDs) grown on GaAs surfaces has been investigated by using metallic leads with narrow gaps. Clear Coulomb staircases and Coulomb gaps have been observed at 4.2 K. Coulomb blockade oscillation which reflects single electron charging in the QDs was also observed when a backgate voltage was swept. It is found that uncapped as-grown InAs QDs with diameter of approximately 50 nm contain electrons without applying a gate bias.

Original languageEnglish
Pages (from-to)31-34
Number of pages4
JournalInstitute of Physics Conference Series
Volume184
StatePublished - 2005
Event31st International Symposium of Compound Semiconductors 2004 - Seoul, Korea, Republic of
Duration: 12 Sep 200416 Dec 2004

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