Shell structures in self-assembled InAs quantum dots probed by lateral electron tunneling structures

M. Jung; T. MacHida; K. Hirakawa; S. Komiyama; T. Nakaoka; S. Ishida; Y. Arakawa

doi:10.1063/1.2131177

Shell structures in self-assembled InAs quantum dots probed by lateral electron tunneling structures

M. Jung, T. MacHida, K. Hirakawa, S. Komiyama, T. Nakaoka, S. Ishida, Y. Arakawa

Division of Nanotechnology

Research output: Contribution to journal › Article › peer-review

63 Scopus citations

Abstract

We have investigated electron filling in single InAs quantum dots (QDs) using a lateral electron transport structure, i.e., nanolithographically defined metallic leads with nanogaps. Elliptic InAs QDs with a diameter of ∼6080 nm exhibited clear shell filling up to 12 electrons before the gate leakage became significant. Shell-dependent charging energies and level quantization energies for the s, p, and d states were determined from the addition energy spectra. Furthermore, it was found that the charging energies and the tunneling conductances strongly depend on the shell, reflecting that the electron wave functions for higher shells are more extended in space.

Original language	English
Article number	203109
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	20
DOIs	https://doi.org/10.1063/1.2131177
State	Published - 14 Nov 2005

Bibliographical note

Funding Information:
The authors thank H. Sakaki for discussions and continuous encouragement. This work was partly supported by SORST of the Japan Science and Technology Corporation, the Grant-in-Aid from Japan Society for the Promotion of Science (No. 13555104), the Grant-in-Aid for COE research (No. 12CE2004), and the IT program from MEXT.

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title = "Shell structures in self-assembled InAs quantum dots probed by lateral electron tunneling structures",

abstract = "We have investigated electron filling in single InAs quantum dots (QDs) using a lateral electron transport structure, i.e., nanolithographically defined metallic leads with nanogaps. Elliptic InAs QDs with a diameter of ∼6080 nm exhibited clear shell filling up to 12 electrons before the gate leakage became significant. Shell-dependent charging energies and level quantization energies for the s, p, and d states were determined from the addition energy spectra. Furthermore, it was found that the charging energies and the tunneling conductances strongly depend on the shell, reflecting that the electron wave functions for higher shells are more extended in space.",

author = "M. Jung and T. MacHida and K. Hirakawa and S. Komiyama and T. Nakaoka and S. Ishida and Y. Arakawa",

note = "Funding Information: The authors thank H. Sakaki for discussions and continuous encouragement. This work was partly supported by SORST of the Japan Science and Technology Corporation, the Grant-in-Aid from Japan Society for the Promotion of Science (No. 13555104), the Grant-in-Aid for COE research (No. 12CE2004), and the IT program from MEXT.",

year = "2005",

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doi = "10.1063/1.2131177",

language = "English",

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journal = "Applied Physics Letters",

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T1 - Shell structures in self-assembled InAs quantum dots probed by lateral electron tunneling structures

AU - Jung, M.

AU - MacHida, T.

AU - Hirakawa, K.

AU - Komiyama, S.

AU - Nakaoka, T.

AU - Ishida, S.

AU - Arakawa, Y.

N1 - Funding Information: The authors thank H. Sakaki for discussions and continuous encouragement. This work was partly supported by SORST of the Japan Science and Technology Corporation, the Grant-in-Aid from Japan Society for the Promotion of Science (No. 13555104), the Grant-in-Aid for COE research (No. 12CE2004), and the IT program from MEXT.

PY - 2005/11/14

Y1 - 2005/11/14

N2 - We have investigated electron filling in single InAs quantum dots (QDs) using a lateral electron transport structure, i.e., nanolithographically defined metallic leads with nanogaps. Elliptic InAs QDs with a diameter of ∼6080 nm exhibited clear shell filling up to 12 electrons before the gate leakage became significant. Shell-dependent charging energies and level quantization energies for the s, p, and d states were determined from the addition energy spectra. Furthermore, it was found that the charging energies and the tunneling conductances strongly depend on the shell, reflecting that the electron wave functions for higher shells are more extended in space.

AB - We have investigated electron filling in single InAs quantum dots (QDs) using a lateral electron transport structure, i.e., nanolithographically defined metallic leads with nanogaps. Elliptic InAs QDs with a diameter of ∼6080 nm exhibited clear shell filling up to 12 electrons before the gate leakage became significant. Shell-dependent charging energies and level quantization energies for the s, p, and d states were determined from the addition energy spectra. Furthermore, it was found that the charging energies and the tunneling conductances strongly depend on the shell, reflecting that the electron wave functions for higher shells are more extended in space.

UR - https://www.scopus.com/pages/publications/27744504439

U2 - 10.1063/1.2131177

DO - 10.1063/1.2131177

M3 - Article

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EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 203109

ER -

Shell structures in self-assembled InAs quantum dots probed by lateral electron tunneling structures

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