@inproceedings{56c1c7b48ce141278319b58570362539,
title = "Shell structures in self-assembled InAs quantum dots observed by lateral single electron tunneling structures",
abstract = "The electron transport through single self-assembled InAs quantum dots (QDs) grown on GaAs surfaces has been investigated by using metallic leads with narrow gaps. Clear Coulomb staircases and Coulomb gaps have been observed at 4.2 K. Coulomb blockade oscillation which reflects the shell filling in the QDs was also observed when a backgate voltage was swept. It is found that uncapped as-grown InAs QDs with a diameter of approximately 50 nm contain one or two electrons.",
author = "M. Jung and K. Hirakawa and S. Ishida and Y. Arakawa and Y. Kawaguchi and S. Komiyama",
year = "2005",
month = jun,
day = "30",
doi = "10.1063/1.1994267",
language = "English",
isbn = "0735402574",
series = "AIP Conference Proceedings",
pages = "635--636",
booktitle = "PHYSICS OF SEMICONDUCTORS",
note = "PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 ; Conference date: 26-07-2004 Through 30-07-2004",
}