Abstract
A new pathway for spontaneous superlattice formation baed upon competing surface reactions at the growth front during Si1-yCy(001) GS-MBE is presented. The superlattice structures, consisting of alternating Si-rich and C-rich layers, had highly regular periodicity extending over the entire substrate area due to a self-arresting feedback loop in the surface-reaction pathways.
Original language | English |
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Pages (from-to) | 235502/1-235502/4 |
Journal | Physical Review Letters |
Volume | 90 |
Issue number | 23 |
State | Published - 13 Jun 2003 |
Bibliographical note
Funding Information:The authors gratefully acknowledge support of the U.S. Department of Energy (DOE) under Grant No. DEFG02-91ER45439 and the Center for Microanalysis of Materials, partially supported by the DOE.