Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching

Seungho Cho; Chao Yun; Stefan Tappertzhofen; Ahmed Kursumovic; Shinbuhm Lee; Ping Lu; Quanxi Jia; Meng Fan; Jie Jian; Haiyan Wang; Stephan Hofmann; Judith L. MacManus-Driscoll

doi:10.1038/ncomms12373

Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching

Seungho Cho
, Chao Yun
, Stefan Tappertzhofen
, Ahmed Kursumovic
, Shinbuhm Lee
, Ping Lu
, Quanxi Jia
, Meng Fan
, Jie Jian
, Haiyan Wang
, Stephan Hofmann
, Judith L. MacManus-Driscoll

Department of Physics and Chemistry

Research output: Contribution to journal › Article › peer-review

99 Scopus citations

Abstract

Resistive switches are non-volatile memory cells based on nano-ionic redox processes that offer energy efficient device architectures and open pathways to neuromorphics and cognitive computing. However, channel formation typically requires an irreversible, not well controlled electroforming process, giving difficulty to independently control ionic and electronic properties. The device performance is also limited by the incomplete understanding of the underlying mechanisms. Here, we report a novel memristive model material system based on self-assembled Sm-doped CeO 2 and SrTiO 3 films that allow the separate tailoring of nanoscale ionic and electronic channels at high density (â 1/410 12 inch â '2). We systematically show that these devices allow precise engineering of the resistance states, thus enabling large on-off ratios and high reproducibility. The tunable structure presents an ideal platform to explore ionic and electronic mechanisms and we expect a wide potential impact also on other nascent technologies, ranging from ionic gating to micro-solid oxide fuel cells and neuromorphics.

Original language	English
Article number	12373
Journal	Nature Communications
Volume	7
DOIs	https://doi.org/10.1038/ncomms12373
State	Published - 5 Aug 2016

Bibliographical note

Funding Information:
This work was supported by the European Research Council (ERC) (Advanced Investigator grant ERC-2009-AdG-247276-NOVOX) and the Cambridge Commonwealth, European & International Trust. We further acknowledge funding from ERC grant InsituNANO, 279342, (S.T. and S.H.) and the Engineering and Physical Sciences Research Council (EPSRC), EP/P005152/1 (S.H.). Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the US Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000. The work at Los Alamos was supported by the US Department of Energy through the LDRD program and performed, in part, at the Center for Integrated Nanotechnologies (CINT), a US Department of Energy, Office of Basic Energy Sciences user facility. M.F., J.J. and H.W. acknowledge the support from the US National Science Foundation, DMR-1401266 (Texas A&M University) and DMR-1643911 (Purdue University).

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title = "Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching",

abstract = "Resistive switches are non-volatile memory cells based on nano-ionic redox processes that offer energy efficient device architectures and open pathways to neuromorphics and cognitive computing. However, channel formation typically requires an irreversible, not well controlled electroforming process, giving difficulty to independently control ionic and electronic properties. The device performance is also limited by the incomplete understanding of the underlying mechanisms. Here, we report a novel memristive model material system based on self-assembled Sm-doped CeO 2 and SrTiO 3 films that allow the separate tailoring of nanoscale ionic and electronic channels at high density ({\^a} 1/410 12 inch {\^a} '2). We systematically show that these devices allow precise engineering of the resistance states, thus enabling large on-off ratios and high reproducibility. The tunable structure presents an ideal platform to explore ionic and electronic mechanisms and we expect a wide potential impact also on other nascent technologies, ranging from ionic gating to micro-solid oxide fuel cells and neuromorphics.",

author = "Seungho Cho and Chao Yun and Stefan Tappertzhofen and Ahmed Kursumovic and Shinbuhm Lee and Ping Lu and Quanxi Jia and Meng Fan and Jie Jian and Haiyan Wang and Stephan Hofmann and MacManus-Driscoll, \{Judith L.\}",

note = "Funding Information: This work was supported by the European Research Council (ERC) (Advanced Investigator grant ERC-2009-AdG-247276-NOVOX) and the Cambridge Commonwealth, European \& International Trust. We further acknowledge funding from ERC grant InsituNANO, 279342, (S.T. and S.H.) and the Engineering and Physical Sciences Research Council (EPSRC), EP/P005152/1 (S.H.). Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the US Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000. The work at Los Alamos was supported by the US Department of Energy through the LDRD program and performed, in part, at the Center for Integrated Nanotechnologies (CINT), a US Department of Energy, Office of Basic Energy Sciences user facility. M.F., J.J. and H.W. acknowledge the support from the US National Science Foundation, DMR-1401266 (Texas A\&M University) and DMR-1643911 (Purdue University).",

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T1 - Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching

AU - Cho, Seungho

AU - Yun, Chao

AU - Tappertzhofen, Stefan

AU - Kursumovic, Ahmed

AU - Lee, Shinbuhm

AU - Lu, Ping

AU - Jia, Quanxi

AU - Fan, Meng

AU - Jian, Jie

AU - Wang, Haiyan

AU - Hofmann, Stephan

AU - MacManus-Driscoll, Judith L.

N1 - Funding Information: This work was supported by the European Research Council (ERC) (Advanced Investigator grant ERC-2009-AdG-247276-NOVOX) and the Cambridge Commonwealth, European & International Trust. We further acknowledge funding from ERC grant InsituNANO, 279342, (S.T. and S.H.) and the Engineering and Physical Sciences Research Council (EPSRC), EP/P005152/1 (S.H.). Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the US Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000. The work at Los Alamos was supported by the US Department of Energy through the LDRD program and performed, in part, at the Center for Integrated Nanotechnologies (CINT), a US Department of Energy, Office of Basic Energy Sciences user facility. M.F., J.J. and H.W. acknowledge the support from the US National Science Foundation, DMR-1401266 (Texas A&M University) and DMR-1643911 (Purdue University).

PY - 2016/8/5

Y1 - 2016/8/5

N2 - Resistive switches are non-volatile memory cells based on nano-ionic redox processes that offer energy efficient device architectures and open pathways to neuromorphics and cognitive computing. However, channel formation typically requires an irreversible, not well controlled electroforming process, giving difficulty to independently control ionic and electronic properties. The device performance is also limited by the incomplete understanding of the underlying mechanisms. Here, we report a novel memristive model material system based on self-assembled Sm-doped CeO 2 and SrTiO 3 films that allow the separate tailoring of nanoscale ionic and electronic channels at high density (â 1/410 12 inch â '2). We systematically show that these devices allow precise engineering of the resistance states, thus enabling large on-off ratios and high reproducibility. The tunable structure presents an ideal platform to explore ionic and electronic mechanisms and we expect a wide potential impact also on other nascent technologies, ranging from ionic gating to micro-solid oxide fuel cells and neuromorphics.

AB - Resistive switches are non-volatile memory cells based on nano-ionic redox processes that offer energy efficient device architectures and open pathways to neuromorphics and cognitive computing. However, channel formation typically requires an irreversible, not well controlled electroforming process, giving difficulty to independently control ionic and electronic properties. The device performance is also limited by the incomplete understanding of the underlying mechanisms. Here, we report a novel memristive model material system based on self-assembled Sm-doped CeO 2 and SrTiO 3 films that allow the separate tailoring of nanoscale ionic and electronic channels at high density (â 1/410 12 inch â '2). We systematically show that these devices allow precise engineering of the resistance states, thus enabling large on-off ratios and high reproducibility. The tunable structure presents an ideal platform to explore ionic and electronic mechanisms and we expect a wide potential impact also on other nascent technologies, ranging from ionic gating to micro-solid oxide fuel cells and neuromorphics.

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U2 - 10.1038/ncomms12373

DO - 10.1038/ncomms12373

M3 - Article

AN - SCOPUS:84981287566

SN - 2041-1723

VL - 7

JO - Nature Communications

JF - Nature Communications

M1 - 12373

ER -

Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching

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